Patents Examined by Michael K. Miggins
  • Patent number: 6093882
    Abstract: A solar cell and a method of producing the same which realizes electrical separation of the p n junction in a simple manner, and a method of producing a semiconductor device a method of producing a semiconductor device in which an electrode is formed by using a metallic paste material on a substrate covered with a silicon nitride film or a titanium oxide film, wherein a glass paste 104 composed mainly of glass which has a property of melting silicon is provided on an n type diffusion layer 101 in the p n junction; the substrate is baked so that penetration of the n type diffusion layer 101 is effected by the glass paste; aluminum is diffused in the n type diffusion layer 101 below a p electrode 103 formed of an aluminum silver paste to thereby form a p type inversion layer 105 inverted to a p type, whereby the electrical separation of the p n junction can be realized.
    Type: Grant
    Filed: July 13, 1999
    Date of Patent: July 25, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Satoshi Arimoto