Abstract: The conventional washing apparatus has a double-cup washing tank that joins and separates to let work be placed therein, with nozzles set on the inner cup to allow a passage between it and the outer cup for spent liquid and/or air. The work is cleaned by washing detergent spirally flowing along the periphery of the inner cup by suction power within the passage, and then dried. Suction is not generated within the inner cup, so the spiral flow is too weak to make the tornado effect. This invention though resolves the above issues by an encased washing apparatus having a capsule-shaped washing chamber that joins and separates, has nozzles thereon, has a work table within that rotates by a drive device, has a drain at the bottom, and is characterized by washing detergent, cleaning water and/or air swirling by negative pressure within the washing chamber and then discharging into a drain.

Abstract: A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Abstract: A method comprises shaping an aluminum oxide ceramic material into a component for an electronic device. The component has first and second major surfaces. A selected region of one or both of the first and second major surfaces is heated to an annealing temperature. The selected region is then cooled below the annealing temperature, so that residual compressive stress is generated in the selected region.

Abstract: A dishwasher including a washing chamber to wash dishes, a sump concavely formed at a lower portion of the washing chamber to collect water used in washing, a microfilter disposed at the sump to filter out dirt produced when the dishes are washed, and an ultrasonic generator to radiate ultrasonic waves toward the microfilter. Since the microfilter is automatically cleaned by the ultrasonic generator, a user may not need to manually clean the microfilter.

Abstract: An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1?T)×D2/R>1.5??(1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×?c×?c))1/2??(2) D2=503292×(1/(f×?s×?s))1/2??(3); ?c is electric conductivity (S/m) of the sidewall, ?s is electric conductivity (S/m) of the SiC solution; ?c is relative permeability of the sidewall, and ?s is relative permeability of the SIC solution.

Abstract: A surgical instrument configured for insertion through a surgical access device including a seal member is disclosed. The surgical instrument includes an elongate body having a central passageway extending at least partially therethrough and a plurality of slots extending radially outward from the central passageway. The plurality of slots are configured to engage the seal member and the surgical access device when the elongate body is translated therethrough to remove debris from the seal member and the surgical access device. The plurality of slots and the central passageway are configured to retain the removed debris therein during withdrawal of the surgical instrument from the surgical access device.

Abstract: A method of cleaning an area using an automatic cleaning device may include receiving, from a video camera, information associated with an edge located on a surface, determining, by an automatic cleaning device, a position of the automatic cleaning device on the surface relative to the edge and using the received information to move the automatic cleaning device from the determined position along a path so that the automatic cleaning device cleans the surface along the path. The path may be substantially parallel to the edge, and the edge may be located a distance from a reference point on the automatic cleaning device during movement of the automatic cleaning device.

Abstract: A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

Abstract: The present invention relates to a process for the removal of polymer thermosets from the substrates without damaging the substrates. The present invention relates to a process for the removal of polymer thermoset from the substrate retaining the physical and chemical properties of the substrates. The present invention more particularly relates to the use of bio molecules for cleaving polymer thermosets and the process to perform the cleaving.

Abstract: A cleaning device (14) for cleaning mop material (33) which freely hangs from a holder (31,32), having an opening (15) in which the hanging mop material (33) is receivable, including a pair of bristle carrying parts (22, 24), each of the bristle carrying parts (22, 24) being rotatable about a respective axis (22a, 24a) by at least one motive device in opposite senses of direction such as to draw the hanging mop material (33) between the bristle carrying parts (22, 24), whereby bristles carried by the bristle carrying parts (22, 24) engage the mop material, and a method of cleaning mop material which freely hangs from a holder, using the cleaning device (14), the method including resisting the drawing-in of the mop material between the bristle carrying parts (22, 24), so that the bristles act on and brush the mop material.

Abstract: Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (?±2?) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

Abstract: A washing machine suitable to effect a washing treatment, thermo-disinfection and possible drying of objects, including a washing chamber in which the objects to be treated are disposed, and a washing circuit including a plurality of exit paths for a washing liquid to be distributed toward the objects to be treated. On the bottom of the washing chamber, in association with a corresponding discharge aperture, valve means to discharge the washing liquid are disposed, which are directly connected to a pipe that discharges directly into the sewerage system.

Abstract: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented.

Abstract: A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.

Abstract: An automated support cleaning system comprising a tank disposed within a housing and configured to circulate an aqueous cleaning solution to remove a support structure from a three-dimensional model.

Abstract: A method for producing a monolithic template comprises a Si wafer with a layer of a III/V semiconductor epitaxially applied to its surface. The III/V semiconductor has a lattice constant differing by less than 10% from that of Si. The method includes epitaxially growing a layer of a III/V semiconductor on the surface of the Si wafer at a wafer temperature from 350 to 650° C., a growth rate from 0.1 to 2 ?m/h, and a layer thickness from 1 to 100 nm. A layer of another III/V semiconductor, identical to or different from the previously applied III/V semiconductor, is epitaxially grown on the III/V semiconductor layer at a wafer temperature from 500 to 800° C., a growth rate from 0.1 to 10 ?m/h, and a layer thickness from 10 to 150 nm.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5?/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Abstract: A substrate treatment method includes a substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having an opposing face to be opposed to a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the opposing face for filling a space defined between the lower surface of the substrate and the opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state; wherein the treatment liquid spreads outwardly over the lower surface of the substrate and further, flows around to a peripheral portion of an upper surface of the substrate.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point.