Abstract: A microelectronic device (10a) provides an improved capacitor (12a) having two plate members (22a, 26a) capacitively coupled via a dielectric layer (24). In accordance with the invention, contact portions (32a, 42a) have substantially twice the thickness of functional portions (28, 38) prior to etching oxide (16) to form contacts (18, 20). In this fashion, the total thickness of capacitor (12a) is minimized yet the thickness of contact portions (32a, 42a) is maximized. Hence, maximum thickness for etching purposes [to construct metal contact 18, 20)] is achieved. Thus the topographical profile of microelectronic device (10a) is essentially reduced to half that of the prior art while the necessary pre-etch thickness of contact portions (32a) and (42a) is maintained. Other pre-etch thickness proporations may be utilized between conductive layer subportions (34) and (36) and conductive layer subportions (44) and (46).