Abstract: A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.

Abstract: In order to provide an enamel frit composition for a low-expansion crystallized glass, capable of producing an enamel coating excellent in abrasion resistance and acid resistance without occurrence of cracks by using glass powder which does not contain any harmful component such as PbO, and to provide an enamel-coated low-expansion crystallized glass plate using the enamel frit composition, the enamel frit composition for a low-expansion crystallized glass essentially consists 40-98 wt % glass powder, 1-55 wt % coloring pigment, and 0-54 wt % filler. The glass powder consists, by weight, of 55-72% SiO.sub.2, 4-8% Al.sub.2 O.sub.3, 14-22% B.sub.2 O.sub.3, 2-4% BaO, 5.1-15% Na.sub.2 O, 0-2% Li.sub.2 O, 0-2.8% K.sub.2 O, and 0-2% F.sub.2.