Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

Abstract: A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.

Abstract: A lower plasma-exclusion-zone ring for a bevel etcher is provided that is configured to etch a bevel edge of a substrate. The lower plasma-exclusion-zone ring includes a ring-shaped body and a radially-outer stepped surface. The ring-shaped body of the lower plasma-exclusion-zone ring defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The radially-outer stepped surface of the lower plasma-exclusion-zone ring extending inwardly into the ring-shaped body between the radially outer surface of the ring-shaped body and the upper surface of the ring-shaped body. The ring-shaped body is made of a material selected from a group consisting of aluminum oxide, aluminum nitride, silicon, silicon carbide, silicon nitride, and yttria.

Abstract: A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber.

Abstract: An upper plasma-exclusion-zone ring for a bevel etcher is provided that is configured to etch a bevel edge of a substrate. The upper plasma-exclusion-zone ring includes a ring-shaped body and a radially-inner stepped surface. The ring-shaped body of the upper plasma-exclusion-zone ring defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The radially-inner stepped surface of the upper plasma-exclusion-zone ring extends inwardly into the ring-shaped body between the radially inner surface of the ring-shaped body and the lower surface of the ring-shaped body. The ring-shaped body is made of a material selected from a group consisting of aluminum oxide, aluminum nitride, silicon, silicon carbide, silicon nitride, and yttria.

Abstract: The present invention relates generally to a plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction for deposition of thin film coatings and modification of surfaces. More particularly, the present invention relates to a plasma source comprising one or more plasma-generating electrodes, wherein a macro-particle reduction coating is deposited on at least a portion of the plasma-generating surfaces of the one or more electrodes to shield the plasma-generating surfaces of the electrodes from erosion by the produced plasma and to resist the formation of particulate matter, thus enhancing the performance and extending the service life of the plasma source.

Abstract: A device for bombarding at least one substrate with a plasma with a first electrode and a second electrode that can be arranged opposite thereto, which electrodes are formed together producing the plasma between the electrodes wherein at least one of the electrodes is formed from at least two electrode units. In addition, this invention relates to a corresponding method.

Abstract: A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing part introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

Abstract: A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6, a gas supply means and a lower electrode 1, wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10, and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7, and the gas through holes 8 and the gas through holes 10 are connected through a groove 9, and wherein the gas supply through holes 6, the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane.

Abstract: A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.

Abstract: A monitoring unit for monitoring a plasma process chamber includes a piezoelectric member comprising a surface that is exposed within the plasma process chamber, a first electrode coupled to the piezoelectric member, a power supply unit coupled to the first electrode and configured to apply a voltage to the piezoelectric member through the first electrode, and a control unit coupled to the piezoelectric member and configured to detect a vibration frequency of the piezoelectric member. The vibration frequency is generated in response to the voltage applied to the piezoelectric member.

Abstract: The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred downward to a base through the first heat conducting pad contacting a lower surface of the focus ring, an insulating ring contacting a lower surface of the first heat conducting pad, and the second heat conducting pad contacting a lower surface of the insulating ring, so as to be cooled by a cooling system provided at the base; turning on a heater disposed in a grounded shielding ring to generate a controllable external heating source, heat from the heater being transferred to the focus ring through the shielding ring, a third heat conducting pad contacting the shielding ring, the insulating ring contacting the third heat conducting pad, and the first heat conducting pad, so as to perform controllable warming to the focus ring.

Abstract: The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (1, 2), each electrode comprising an elongated cavity (4), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (11), and outlet nozzle width (12).

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.

Abstract: [Object] To provide a plasma apparatus capable of igniting plasma reliably over a long period. [Solution] The apparatus includes a hollow structural body (11) having a hollow structure along an axis, a first electrode (12) disposed inside the hollow structural body (11), and a second electrode (14) having a structure that externally covers a plasma generation area (13) of the hollow structural body (11). The first electrode (12) has a deformation structure (12b) within the plasma generation area of the hollow structural body.

Abstract: The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (1, 2), each electrode comprising an elongated cavity (4), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (11), and outlet nozzle width (12).

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL.