Patents Examined by Minhloan Train
  • Semiconductor device having two-layered passivation film
    Patent number: 5065222
    Abstract: A passivation film of MOS semiconductor device is composed of a first passivation layer and a second passivation layer formed on the first passivation layer. The first passivation layer comprises silicon dioxide containing phosphorus in 0.5 percent or less and having a film thickness of 1500 .ANG. or more. The second passivation layer comprises silicon oxynitride or silicon nitride.
    Type: Grant
    Filed: November 9, 1988
    Date of Patent: November 12, 1991
    Assignee: Seiko Instruments Inc.
    Inventor: Kazutoshi Ishii