Abstract: An organic light-emitting display device comprises a substrate comprising a display area with sub-pixels arranged along a first direction and a second direction intersecting the first direction and a non-display area surrounding the display area; an overcoat layer placed on the substrate; first electrodes placed on the overcoat layer and allocated to the sub-pixels; a first bank that is placed in the display area and the non-display area and has first openings exposing the first electrode; a second bank that is placed in the display area and the non-display area and has second openings exposing the first electrodes arranged along the second direction on the first bank; and organic light-emitting layers placed on the second openings, wherein the second openings expose the first bank in the non-display area.

Abstract: A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film 16 made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film 16, the protecting film 16 is formed by alternately performing a step of forming a high-density layer 16H by using an ALD method and a step of forming, by using an ALD method, a low-density layer 16L that has the same constituent element as the high-density layer 16H and has a lower density than the high-density layer 16H. The protecting film 16 has a layered structure made of one or more high-density layers 16H and one or more low-density layers 16L so that the low-density layer 16L and the high-density layer 16H are alternately layered so as to be in contact with each other.

Abstract: An LED package for connection to a heat sink, the LED package comprising an LED structure having a first surface for emitting light and an opposite second surface, the LED structure comprising a light producing layer and a reflective layer, wherein the reflective layer is provided between the light producing layer and the second surface, whereby light is reflected by the reflective layer to the first surface, the first surface further comprising first and second electrical contacts. A frame overlaps the periphery of the first surface of the LED structure and has an aperture for emitting light from the first surface, the frame comprising first and second vias for connection to an external electrical circuit, the first and second vias are soldered to the first and second electrical contacts of the LED structure respectively.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a single crystalline semiconductor layer, a single crystal epitaxial source semiconductor layer located between the single crystalline semiconductor layer and the alternating stack and epitaxially aligned to the single crystalline semiconductor layer, and a memory stack structure vertically extending through the alternating stack and containing a memory film and an epitaxial vertical semiconductor channel including a single crystal semiconductor material that is epitaxially aligned to the epitaxial source semiconductor layer at an interface.

Abstract: A method for manufacturing a semiconductor device includes forming a stacked configuration of a plurality of silicon germanium layers and a plurality of silicon layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a silicon layer stacked on a silicon germanium layer, patterning the stacked configuration into a plurality of patterned stacks spaced apart from each other, and etching exposed sides of the plurality of silicon germanium layers to remove portions of the silicon germanium layers from lateral sides of each of the plurality of silicon germanium layers, wherein a concentration of germanium is varied between each of the plurality of silicon germanium layers to compensate for variations in etching rates between the plurality of silicon germanium layers to result in remaining portions of each of the plurality of silicon germanium layers having the same or substantially the same width as each other.

Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

Abstract: A vertical MOSFET having a trench gate structure includes an n?-type drift layer and a p-type base layer formed by epitaxial growth. In the n?-type drift layer, an n-type region, a first p+-type region, and a second p+-type region are provided. A metal film of a trench SBD is connected to a source electrode; and a p+-type region is provided between the source electrode and the p-type base layer.

Abstract: A first side wall and a second side wall of a trench are each an a-plane having high carrier mobility. Along the first side wall of the trench, a gate insulating film is provided. A gate electrode is provided in the trench, and across the gate insulating film, opposes a portion of a p-type base region between an n+-type source region and an n-type current spreading region. Along the second side wall of the trench, a conductive layer is provided. The conductive layer, at the second side wall of the trench, forms Schottky contacts with a p++-type contact region, the p-type base region, and the n-type current spreading region. The trench has a bottom corner portion that is at the second side wall and encompassed by a p+-type region that is provided in the n-type current spreading region so as to be separated from the p-type base region.

Abstract: A system and method for fabricating metal insulator metal capacitors while managing semiconductor processing yield and increasing capacitance per area are described. A semiconductor device fabrication process places an oxide layer on top of a metal layer. A photoresist layer is formed on top of the oxide layer and etched with repeating spacing. One of a variety of lithography techniques is used to alter the distance between the spacings. The process etches trenches into areas of the oxide layer unprotected by the photoresist layer and strips the photoresist layer. The top and bottom corners of the trenches are rounded. The process deposits a bottom metal, a dielectric, and a top metal on the oxide layer both on areas with the trenches and on areas without the trenches. The process completes the metal insulator metal capacitor with metal nodes contacting each of the top plate and the bottom plate.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over a semiconductor substrate, a source electrode and a drain electrode formed over the semiconductor substrate within openings formed in the first dielectric layer, a gate electrode formed over the semiconductor substrate between the source electrode and the drain electrode, and a protection layer disposed on the source electrode, the drain electrode, and the first dielectric layer, wherein a first edge of the protection layer terminates the protection layer between the source electrode and the gate electrode, and a second edge of the protection layer terminates the protection layer between the gate electrode and the drain electrode. A method for fabricating the semiconductor devices includes forming a first dielectric layer over the semiconductor substrate, forming source and drain electrodes, depositing the protection layer over the source and drain electrodes, and forming the gate electrode.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A light emitting device according to one embodiment of the present disclosure includes a light emitting element, a fluorescent material layer, a reflective film, a light-transmissive member, and an absorbing layer. The light emitting element emits first light. The fluorescent material layer is disposed on the light emitting element. The fluorescent material layer is excited by the first light to emit second light being longer in wavelength than the first light. The reflective film is disposed on the fluorescent material layer to reflect part of the first light and transmit the second light. The light-transmissive member is disposed on the reflective film. The absorbing layer is disposed on the light-transmissive member to absorb part of the first light. The light emitting element is identical in area to or smaller in area than the fluorescent material layer in a plan view.

Abstract: A 3D memory device includes a multi-layers stacking structure having a plurality of conductive layers and insulating layers stacked in a staggered manner, at least one trench passing through the conductive layers and a plurality of recess regions extending into the conductive layers from the trench; a dielectric blocking strip lining sidewalls of the trench and the recess regions; a plurality of floating gates disposed in the recess regions and isolated from the conductive layers by the dielectric blocking strip; a dielectric strip overlies sidewalls of the floating gates exposed from the recess regions; a semiconductor strip disposed in the trench, insulated from the floating gates by the dielectric strip, and includes a first doping region, a second doping region and a channel region disposed between and connects to the first doping region and the second doping region, and overlapping with the floating gates.

Abstract: A resealable cover for a beverage container that holds a carbonated beverage. The cover includes a base engageable with a rim of the container and a lid movable between an open and closed position relative to the base. When in the closed position, a passageway is defined between a portion of the lid and a portion of the base. The passageway permits fluid communication between air surrounding an exterior surface of the cover and a space defined between the lid and an opening in the container. Pressure that builds up under the lid from gas escaping from the liquid may be relieved by outgassing through the passageway. The cover includes latches on the base that engage in notches on the lid to help lock the lid in place. The lid is rotated relative to the base to release the latches and permit the lid to be opened.

Abstract: Provided is a light emitting display apparatus including a first substrate, a first electrode on the first substrate, a bank layer having an opening exposing a portion of the first electrode layer, a bank recess depressed on the bank layer, a second electrode layer on the first electrode layer and the bank layer, and a cover layer covering a lower surface and an inner side surface of the bank recess.

Abstract: A photoelectric sensor capable of saving a space is provided. A photoelectric sensor includes a case body with a substantially rectangular parallelepiped shape that accommodates at least one of a light projecting section and a light receiving section. The case body has a front surface that has a light projecting and receiving surface that allows at least one of light from the light projecting section and light to the light receiving section to pass therethrough and a rear surface that is located on a side opposite to the front surface, and a cable that accommodates cords that are connected to at least one of the light projecting section and the light receiving section via a control section is attached to the rear surface.

Abstract: A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and project light emitted by the LED display panel. The LED display panel includes an LED panel and a micro lens array arranged over the LED panel. The LED panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, and an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits. The micro lens array includes a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies.

Abstract: A light emitting device can include a substrate including a top surface, an outermost side surface, and a bottom surface; a light emitting diode chip on the top surface of the substrate; a reflecting member disposed on a first portion of the top surface of the substrate and the reflecting member having a cavity; a first metal layer disposed on a second portion of the top surface, one side of the outermost side surface, and a first portion of the bottom surface; a second metal layer disposed on a third portion of the top surface, another side of the outermost side surface, and a second portion of the bottom surface; a heatsink disposed on the bottom surface of the substrate; and at least two heatsink holes in the substrate formed to pass through the substrate, in which the at least two heatsink holes are in contact with the heatsink, and a reflective material is on an inside surface of the at least two heatsink holes, the first metal layer, the second metal layer, and the heatsink are separated from each other

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.