Abstract: An apparatus and method for optically aligning output beams from multiple, individual, different-wavelength laser diodes. The output of a first laser diode is fed directly into the high-reflector of a laser diode, through the gain medium, and is output from an output coupler in each of a sequence of abutting laser diodes. The output from the last laser diode includes the individual beams from each laser diode in the same single optical axis, while retaining the original wavelengths.

Abstract: A driver circuit is designed employing a current sensing circuit adapted to sense driving current being supplied to one or more light emitting devices. The driver circuit additionally employs a pulse width modulation circuit adapted to modulate a pulse width of a control signal based at least in part on an output of the current sensing circuit, the control signal being employed to adjust the driving current being supplied to the one or more light emitting devices. The driver circuit additionally employs a buck converter adapted to switch the driving current being supplied to the one or more light emitting devices.

Abstract: To provide an excimer laser device and method in which the frequency of full gas exchange within the laser chamber is reduced, and more preferably full gas exchange is made unnecessary. The gas supply device and gas exhaust device are controlled so that the laser gas in the laser chamber is partially exchanged in a gas exchange quantity that maintains the quantity of impurities in the laser chamber at or below a fixed level. Also, the gas exchange quantity is obtained using the total quantity of output light energy reduction A, the total gas pressure in the laser chamber P, and output light energy reduction quantity per unit time k, for the case where partial gas exchange is repeated infinitely in the laser chamber.

Abstract: A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

Abstract: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 ?g/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 ?g/g or less at 150° C.

Abstract: Complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cells include at least a first inverter formed in a fin-shaped pattern of stacked semiconductor regions of opposite conductivity type. In some of these embodiments, the first inverter includes a first conductivity type (e.g., P-type or N-type) MOS load transistor electrically coupled in series with a second conductivity type (e.g., N-type of P-type) MOS driver transistor. The first inverter is arranged so that active regions of the first conductivity type MOS load transistor and the second conductivity type driver transistor are vertically stacked relative to each other within a first portion of a vertical dual-conductivity semiconductor fin structure. This fin structure is surrounded on at least three sides by a wraparound gate electrode, which is configured to modulate conductivity of both the active regions in response to a gate signal.

Abstract: Providing a high peak power short pulse duration gas discharge laser output pulse comprises a pulse stretcher a laser output pulse optical delay initiating optic diverting a portion of the output laser pulse into an optical delay having an optical delay path and comprising a plurality of confocal resonators in series aligned to deliver an output of the optical delay to the laser output pulse optical delay initiating optic. The plurality of confocal resonators comprises four confocal resonators comprising a twelve pass four mirror arrangement. An apparatus and method may comprise a plurality, e.g., two pulse stretchers in series and may include spatial coherency metrology.

Abstract: An optical amplifier including: a photonic gain clement; and, a transistor electromagnetically coupled to the gain element to inject current into the gain element responsively to the internal optical intensity of the gain element. The coupling of the transistor and the photonic gain element is such that as the optical intensity within the photonic gain element increases, the current injected by the transistor increases, thereby preventing filamentation in the photonic gain element.

Abstract: A disclosed laser diode driving circuit causes a laser diode to emit light by varying a current value of a current source in accordance with a control signal input externally and supplying a current that is the same as or proportional to the current value to the laser diode. The driving circuit includes correction circuitry for generating a reference forward voltage as a reference for the laser diode in accordance with a predetermined driving current for driving the laser diode, generating a forward voltage for the laser diode in accordance with the predetermined driving current, and correcting a current supplied to the laser diode so that the forward voltage becomes the same as the reference forward voltage.

Abstract: A driver for a vertical-cavity surface emitting laser (VCSEL) is provided that includes a bias current source, a modulation source, and a peaking control circuit. The bias current source is operable to generate a bias current for the VCSEL and an output voltage. The modulation current source is coupled to the bias current source by at least one switch and is operable to generate a modulation current for the VCSEL when the switch is closed. The peaking control circuit is coupled to the bias current source. The peaking control circuit is operable to receive the output voltage from the bias current source and to generate a driver output voltage for the VCSEL based on the output voltage. The driver output voltage has less peaking than the output voltage.

Abstract: A chamber for a gas discharge laser is disclosed and may include a chamber housing having a wall, the wall having an inside surface surrounding a chamber volume and an outside surface, the wall also being formed with an orifice. For the chamber, at least one electrical conductor may extend through the orifice to pass an electric current into the chamber volume. A member may be disposed between the conductor and the wall for preventing gas flow through the orifice to allow a chamber pressure to be maintained in the volume. The chamber may further comprise a pressurized compartment disposed adjacent to the orifice for maintaining a pressure on at least a portion of the outside surface of the wall to reduce bowing of the wall near the orifice due to chamber pressure.

Abstract: Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.

Abstract: A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

Abstract: Expansion-adapted mounting and electrical contacting of laser diode elements are connected with one another in terms of structural engineering such that the laser diode elements can be stacked or arranged laterally in one plane for producing vertical diode laser arrangements with low production complexity. The upper and the lower layers of a heat-distributing multilayer substrate for a diode laser subelement, between which a separating layer is disposed, contain metal strata regions arranged spaced from one another of which for forming strata region pairs each strata region of the upper layer is joined electrically conducting to a strata region of the lower layer. The separating layer contains at least one electrically insulating stratum made of non-metallic material and the sum of the thicknesses of metallic strata in the multilayer substrate exceeds the sum of the thicknesses of non-metallic strata at least in a partial region perpendicular to the mounting surface for at least one laser diode element.

Abstract: The relative timing delay between channels of a discharge circuit can be adjusted through application of appropriate control voltages. A control voltage of relatively long duration and relatively small voltage, with respect to a common system pulse, can be applied to any channel in order to adjust the relative timing delay. This control voltage can be, for example, a magnetization pre-pulse voltage applied to an indictor for a channel in order to adjust a hold-off time. A synchronization control unit and feedback loop can be used to monitor the timing, such that the syncronization control unit can apply a control voltage when a delay change exceeds a timing adjustment threshold value, and can apply a pre-ionization voltage when the delay change is less than the adjustment threshold value. Using both a control voltage and a pre-ionization voltage provides for both coarse and fine adjustment of the delay.

Abstract: A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffraction grating. A wavelength controlling region is configured such that the wavelength controlling waveguide portion and the wavelength controlling diffraction grating are included therein. A gain region is configured such that the gain waveguide portion and the gain diffraction grating are included therein. The Bragg wavelength of the wavelength controlling region is longer than that of the gain region in a state in which current injection or voltage application is not performed for the wavelength controlling waveguide portion.

Abstract: An optical module includes a stem; a first lead pin and a second lead pin for receiving differential signals, the first and second lead pins penetrating the stem; a mount block fixed to the stem; a laser diode having a pair of electrodes; a submount mounted on the mount block and having a matching resistance, an interdigital capacitor, and a plurality of electrode patterns on a surface on the submount; and a first wire and a second wire electrically connecting the submount to the first and second lead pins, respectively. The laser diode is mounted on one of the electrode patterns on the submount and connected to another one of the electrode patterns on the submount by a third wire such that the laser diode, together with the matching resistance and the interdigital capacitor, forms an electrical circuit. The value of the matching resistance is smaller than an impedance value of a differential signal source supplying the differential signals minus the resistance of the laser diode.

Abstract: A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or smaller, the tilt angle of the crystal orientation of the principal face is 8 to 54.7 degrees. When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or greater, the tilt angle of the crystal orientation of the principal face is 13 to 54.7 degrees.

Abstract: An alterable frequency coherent light generator for the generation of highly energy efficient coherent light, by means of a power supply connected to a four-lead capacitor, which is connected to a variable resistive device in series with a vacuumed bulb. The direct current being conducted through the circuit is formed into a transverse wave of electrons or electric pulses within the vacuumed bulb by means of four-lead capacitor, variable resistive device, vacuumed bulb, and electric current interaction. The anode of the vacuumed bulb is thoroughly connected to the corners of a thin, square metal plate which has a relief conductive wire connecting from an edge of the thin, square metal plate to the four-lead capacitor. The electric pulses emanating from the vacuumed bulb, resonate the electrons within the thin, square metal plate at a frequency determined by four-lead capacitor, variable resistive device, vacuumed bulb, and electric current interaction. The resonating electrons generate coherent light.

Abstract: A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.