Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer.
Type:
Grant
Filed:
February 26, 1996
Date of Patent:
September 30, 1997
Assignee:
Southern Methodist University
Inventors:
Donald P. Butler, Zeynep Celik-Butler, Pao-Chuan Shan