Patents Examined by Ngan Y. Ngo
  • Patent number: 5672903
    Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer.
    Type: Grant
    Filed: February 26, 1996
    Date of Patent: September 30, 1997
    Assignee: Southern Methodist University
    Inventors: Donald P. Butler, Zeynep Celik-Butler, Pao-Chuan Shan