Abstract: A silicon structure includes a silicon substrate having an electric element; a wiring conductor and a bonding pad, connecting the electric element and an external circuit; a protective layer disposed on the silicon substrate; and a pad opening pattern provided in the protective layer to exposed the bonding pad, wherein a probe mark position and a wire bonding position differ, without increasing the size of the bonding pad in plan view. A substrate exposure part, which is not covered with the protective layer, is provided at part of an outer edge of the bonding pad disposed inside the pad opening pattern in the protective film, and the wiring conductor is not exposed through substrate exposure part.