Patents Examined by Oik Chaudhuri
  • W/WC/TAC ohmic and rectifying contacts on SiC
    Patent number: 6388272
    Abstract: Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy through a dielectric layer.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: May 14, 2002
    Assignee: Caldus Semiconductor, Inc.
    Inventor: Bruce Odekirk