Abstract: An apparatus for use in a processing chamber is provided. A consumable is within the processing chamber. A scale is positioned to measure a mass of the consumable.

Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

Abstract: Resonance can be surely provided under any plasma condition in such a manner that an antenna (3) is arranged in an opening of an upper part of a chamber (1) to produce an electromagnetic field generated by a microwave, a top plate (4) for sealing the opening of the chamber (1) is provided under the antenna (3), a ring-shaped ridge (41) is provided on a lower surface of the top plate (4) such that a thickness thereof in a diameter direction is tapered so as to be varied sequentially. Thus, only one kind of top plate has the same effect as a top plate having various thicknesses, so that absorption efficiency to the plasma can be considerably improved and the plasma can be generated stably over a range from a high pressure to a low pressure.

Abstract: Method of generating an atmospheric pressure glow discharge plasma (APG), wherein said plasma is generated in a discharge space formed between at least one first electrode surface and at least one second electrode surface. The method comprises at least the steps of supplying a gaseous substance to said discharge space and powering said first and said second electrode surface for generating said plasma. Said step of supplying a gaseous substance to the discharge space comprises providing at least one intermediate gas supply stream from at least one of said first and second electrode surfaces. The step of supplying said gaseous substance to the discharge space further comprises providing a main gas supply stream for forcing the at least one intermediate gas supply stream in a direction along the first and second electrode surfaces.

Abstract: A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate, wherein the waveguide has a single microwave output opening in a location corresponding to a central par of the microwave emitting member.

Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.

Abstract: On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

Abstract: The present invention provides a wafer handling device having a base plate (G; G′), which has a first and a second supporting surface for a respective wafer (W1, W2) to be laid on; and a fixing device (K1, K2, S; K1′, K2′, S′) for the detachable fixing of the respective wafer (W1, W2) on the first and second supporting surface; the fixing device (K1, K2, S; K1′, K2′, S′) being configured in such a way that it contacts the respective wafer (W1, W2) only in the outer edge region of the side facing away from the supporting surface.

Abstract: An improved vacuum plasma etching device for plasma etching semiconductor wafers that have a photo-resist pattern. The improved plasma etching device has a reaction chamber in which the plasma etching is performed during a process cycle, an entrance vacuum loadlock for holding the next semiconductor wafer to be plasma etched, an exit vacuum loadlock for transporting the semiconductor wafers out of the reaction chamber after the plasma etching process, and a source of ultraviolet light. Exposing the semiconductor wafer to the ultraviolet light cures the photo-resist patterns, thereby improving CD dispersion, enhancing pattern transfer, and preventing photo-resist reticulation. Curing the photo-resist patterns while the semiconductor wafer is being held during the process cycle in the entrance vacuum loadlock, increases efficiency and productivity.

Abstract: An LCD substrate transfer apparatus includes an articulated arm unit attached to a support base, to be rotatable and stretchable/retractable within a horizontal plane. The articulated arm unit has a distal end arm, which reciprocates in a transfer direction upon stretching/retracting operation of the articulated arm unit. A support member is arranged on the distal end arm to support an LCD substrate. The support member is attached to the distal end arm to be reciprocatable in the transfer direction. A pair of temporary shelves for supporting the LCD substrate are disposed to sandwich the support member when the articulated arm unit and support member retract. The LCD substrate is placed on the temporary shelves, and only the articulated arm unit is rotated to switch the transfer directions.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber.