Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
Type:
Grant
Filed:
December 27, 1999
Date of Patent:
April 15, 2003
Assignee:
Xerox Corporation
Inventors:
Christopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun