Patents Examined by Pat X. Cao
  • Patent number: 6548908
    Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: April 15, 2003
    Assignee: Xerox Corporation
    Inventors: Christopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun