Abstract: Automatic pattern matching and shape measurement are enabled by adjusting a brightness level of a microscope image based on information of a local region of the image so that a magnified image of the local region takes on an appropriate brightness and is not affected by brighter peripheral portions of the image, thereby enabling feature extraction of a desired pattern. By using the inventive method in an energized beam apparatus having a sample stage capable of linear and tilting movement, a series of operations including cross section forming, sample tilting, cross section observation, and pattern recognition, may be performed on an automated basis.
Abstract: A compact detector for secondary and backscattered electrons in a scanning electron beam system includes a microchannel plate detector and a solid state detector connected in a tandem manner. The detector offers large bandwidth and high dynamic range. The detector can be used for article inspection, lithography, metrology, and other related applications. The compactness of the detector makes it ideally suited for utilization in a miniature electron beam column, such as a microcolumn.
Type:
Grant
Filed:
May 24, 2001
Date of Patent:
April 6, 2004
Assignee:
Applied Materials, Inc.
Inventors:
Tai-Hon Philip Chang, Stuart L. Friedman, Ming L. Yu
Abstract: A UV light utilizing an angled dichroic cold mirror reflector to selectively direct UV light out of a window on the side of the light housing while transmitting visible and infrared light out a window in the end of the housing to eliminate heat. The light may be used both as a flashlight and a black light for UV inspection. A removable cap can be placed over the end window to block visible light.
Abstract: A focused ion beam apparatus has a gas injector provided with a plurality of gas supply pipes each having a nozzle at one end for ejecting a gas and a housing in which the plurality of gas supply pipes are slidably accommodated. The housing has a tip portion with a hole provided at a terminal end thereof and the hole has a size set so that only one of the nozzles can extend therefrom. In addition, the housing has a tapered nozzle guide portion for guiding a selected nozzle from a retracted position at which the selected nozzle does not extend from the hole to an extended position at which the selected nozzle extends from the hole.
Abstract: A wafer scanning support unit of an ion implantation apparatus includes a vacuum chamber having an opening in one side thereof for admitting an ion beam, and a wafer scanning support disposed within the vacuum chamber for supporting a wafer at an inclination and moving the wafer up and down in front of the ion beam so that the wafer is scanned. The wafer scanning support includes a scan shaft pivotally mounted about a horizontal axis so that it can be inclined relative to the vertical, an elevating member slidingly coupled to the scan shaft so as to be movable therealong, a driving motor for moving the elevating member up and down along the scan shaft, and a wafer holder connected to the elevating member so as to be movable therewith. The inclined wafer holder is moved along an inclined path corresponding to the inclination of the scan shaft, so that the ion beam travels substantially the same distance to impinge all portions of the wafer including the uppermost and bottommost parts.