Abstract: Structures for memory cell applications, including capacitors for DRAM and ferroelectric memory cells from FRAM, whose method of manufacture consists of depositing a ferroelectric or high-epsilon dielectric material to completely fill a cavity whose geometrical width is the sole determinant of the thickness of the electrically active portion of the ferroelectric or high-epsilon dielectric layer in the final device. In the preferred embodiment, the cavity into which the dielectric is deposited is defined by the gap between the plate and stack electrodes which are deposited and patterned in a through-mask plating step prior to the dielectric deposition.
Type:
Grant
Filed:
May 3, 1999
Date of Patent:
June 5, 2001
Assignee:
International Business Machines Corporation
Inventors:
Raul Edmundo Acosta, James Hartfiel Comfort, Alfred Grill, David Edward Kotecki, Katherine Lynn Saenger