Abstract: A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

Abstract: A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.

Abstract: Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.

Abstract: A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (?m, ?a) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along <1-100> axis, y is a coordinate in a direction along <11-20> axis, (0, 0) represents a coordinate (x, y) of the center, ?m represents a direction component along <1-100> axis in an off-angle of <0001> axis with respect to a normal, ?a represents a direction component along <11-20> axis in the off-angle, (M1, A1) represents a rate of change in the off-angle (?m, ?a) with respect to the position (x, y) in the main surface, and (M2, A2) represents the off-angle (?m, ?a) at the center.

Abstract: Disclosed herein are methods of preparing a composition comprising crystalline biomolecules, for example, crystalline antibodies. In exemplary embodiments, the method comprises forming a fluidized bed of crystalline biomolecules using, for example, a counter-flow centrifuge to exchange buffer and/or to concentrate the crystalline biomolecules in a solution. Also provided are methods of detecting crystalline biomolecules and/or amorphous biomolecules in a sample.

Abstract: A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an NV region; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 ?m and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×1011/cm3 or higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed.

Abstract: Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided.

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about ?15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Abstract: A structural molecular building block is provided and includes first structural molecules arranged in a three-dimensional structure and second structural molecules. Each of the second structural molecules is attached at a first region thereof to one of the first structural molecules to form the three-dimensional structure into a tessellating molecular building block and has a second region thereof for connection to a corresponding structural molecule of an additional tessellating molecular building block. The second structural molecules facilitate tessellation of the tessellating molecular building block with additional tessellating molecular building blocks to encourage growth of a macroscopic crystal.

Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.

Abstract: An object of the present invention is to provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation. In order to solve the above problems, the present invention provides a method for producing SiC single crystals, including a stress reduction step of heating a SiC single crystal at 1800° C. or higher in an atmosphere containing Si and C elements to reduce internal stress in the SiC single crystal. With this configuration, the present invention can provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation.

Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]?(Ca1+Ca2)?(Cd1+Cd2)?26 [ppta].

Abstract: An assembly sleeve of a single crystal pulling apparatus, and the single crystal pulling apparatus are provided. The assembly sleeve includes inner and outer cylinders and a bottom cylinder. The outer cylinder is provided with openings at both ends and sleeved onto the inner cylinder. The bottom cylinder is arranged at the opening at a lower end of the outer cylinder, and includes an annular plate and a lower cylinder. Each of the inner lower cylinders is of an inverted-cone shape, an upper end of the inner cylinder is connected to an upper end of the outer cylinder, an outer edge of the annular plate is hermetically connected to the lower end of the outer cylinder, an inner edge of the annular plate is connected to an upper end of the lower cylinder, and a lower end of the inner cylinder is fixedly connected to an upper surface of the annular plate.

Abstract: Disclosed herein is a method for continuously preparing crystalline cannabinoid particles. The method includes preparing a cannabinoid-rich solution that comprises a first cannabinoid and inducing the cannabinoid-rich solution to a supersaturated state in which the first cannabinoid has a supersaturated concentration that is greater than a corresponding saturation concentration of the first cannabinoid. The method includes flowing the cannabinoid-rich solution into a continuous stirred-tank reactor (CSTR) in a continuous manner, mixing the cannabinoid-rich solution under turbulent mixing conditions to form a plurality of crystalline cannabinoid particles and a cannabinoid-depleted solution within the CSTR, and discharging the plurality of crystalline cannabinoid particles and the cannabinoid-depleted solution from the CSTR in a continuous manner to provide a flow rate through the CSTR.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: Preparations of a highly coherent diamond nitrogen vacancy (NV?) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NV?s are generated in <100> and <311> crystal orientation growth regions from scratch, while native NV?s in a <111> crystal orientation growth region are disappeared; and the <100> and <311> crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NV?s are produced under nondestructive conditions, and the diamond anvil with controlled NV? depths are prepared to achieve a precise detection of the NV? at a pressure above 60 GPa.

Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Abstract: The disclosure provides a method for growing a gallium oxide single crystal by casting and a semiconductor device containing the gallium oxide single crystal. The method includes: 1) heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and 2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained. The gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal. In step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of at least 2% is present in a growth atmosphere.