Abstract: A semiconductor laser includes a first conductivity type semiconductor substrate having opposite first and second surfaces, a first conductivity type semiconductor layer grown on the first surface, a thin GaInP or AlGaInP active layer having a band gap energy smaller than that of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer having a band gap energy larger than that of the active layer. The first conductivity type semiconductor layer has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface, and the second crystal plane forms a second angle larger than the first angle with the {100} surface.

Abstract: Plural planar optical devices are simultaneously pumped by a single pumping source. Various arrangements for accomplishing such pumping are disclosed. By utilizing these arrangements, the topology and routing of integrated arrays including optical devices are simplified.

Abstract: In a high energy laser system utilizing phosphate laser glass components to mplify the laser beam, the laser system requires a generated laser beam having an emission bandwidth of less than 26 nm and the laser glass components consist essentially of (on an oxide composition basis):______________________________________ Mole % ______________________________________ P.sub.2 O.sub.5 50-75 Al.sub.2 O.sub.3 >0-10 K.sub.2 O >0-30 MgO 0-30 CaO 0-30 Li.sub.2 O 0-20 Na.sub.2 O 0-20 Rb.sub.2 O 0-20 Cs.sub.2 O 0-20 BeO 0-20 SrO 0-20 BaO 0-20 ZnO 0-20 PbO 0-20 B.sub.2 O.sub.3 0-10 Y.sub.2 O.sub.3 0-10 La.sub.2 O.sub.3 0-8 Ln.sub.2 O.sub.3 0.01-8 ______________________________________whereinthe sum of MgO and CaO is >0-30;the sum of Li.sub.2 O, Na.sub.2 O, Rb.sub.2 O, and Cs.sub.2 O is 0-20;the sum of BeO, SrO, BaO, ZnO, and PbO is 0-20;the sum of B.sub.2 O.sub.3 and Y.sub.2 O.sub.3 is 0-10; andLn.sub.2 O.sub.3 represents the sum of the oxides of active lasing lanthanides of atomic number 58-71.

Abstract: A multi-quantum well (MQW) structure type semiconductor integrated laser element is constituted by a laser diode section and an optical modulator section which is integrated with the laser diode section and which contains a multi-quantum well structure. The multi-quantum well structure of the optical modulator section is a coupled multi-quantum well structure in which quantum states of the quantum wells are coupled with one another, thereby forming mini-bands. The large amounts of carriers produced by absorption are quickly scattered and lost through the mini-bands thereby enabling the modulation in proportion to the intensity of the electric field for modulation. The MQW integrated semiconductor laser element thus obtained exhibits excellent modulation characteristics and provides high output, and can be fabricated at a low cost with a high production yield.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting element mounted on a package stem via a radiating heatsink block, the light emitting point of the light emitting element being positioned on the central axis of the stem and at or near the center of mass of the heatsink block. Another light emitting device includes a light emitting element mounted on a stem via a heatsink block, the light emitting point of the element being positioned on the central axis of the stem with only a portion of a lower surface of the heatsink block close to the central axis of the stem attached to the stem. The movement of the light emitting point with temperature variations is suppressed. Another light emitting device includes a laser chip element mounted on a package stem via a heatsink block, the laser chip element being mounted on the heatsink block so that the emitted light forms an angle .theta.

Abstract: A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.

Abstract: A laser diode package incorporating a first laser diode (or diode laser array) for providing a modulated light output and a second laser diode (or diode laser array) with substantially similar thermal operating characteristics which is modulated with a complementary current signal relative to the modulated current signal driving the first laser diode. The two laser diodes are mounted in close proximity to one another on a temperature controlled heat sink. For diode laser arrays, slots are provided in the heat sink between adjacent array elements. The complementary modulation of corresponding elements in each laser diode ensures that the combined heat generation by each such corresponding pair of elements is constant in time. In the case of digital modulation, the driver logic and current drivers providing the complementary modulation signals may be a modulation controlled switch routing a constant current to one or the other of each corresponding pair of laser elements.

Abstract: In accordance with the present invention, a surface emitting laser includes a substrate, a first distributed feedback mirror formed on the substrate, and an active gain medium formed on the first mirror. The active gain medium includes at least one active, optically emitting layer and one barrier layer. A second distributed feedback mirror is formed on the active gain medium. The first and second mirrors define a resonant cavity for supporting a standing wave optical field at a designed wavelength of operation The first and second mirrors have first and second reflective bandwidths that respectively include first and second transmissive bandwidths for receiving optical pumping energy. The first and second reflective bandwidths are shifted in wavelength relative to one another so that the first and second transmissive bandwidths are located at distinct wavelengths.

Abstract: A long wavelength VCSEL according to the present invention is optically coupled to and optically pumped by a shorter wavelength, electrically pumped VCSEL. Short wavelength radiation emitted from the top surface of the underlying VCSEL is transmitted through the lower mirror of the long wavelength VCSEL. Long wavelength radiation is preferably emitted from the top surface of the long wavelength VCSEL. The two VCSELs are preferably joined together using a transparent optical adhesive, a wafer-fusing process, or a metal to metal bond.

Abstract: A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation groove is formed between the adjacent laser elements, which are defined by rib loaded waveguides created by etching mesas above a planar active multilayer waveguide. Separate electrical connections to the ribs, and a common electrical connection to the substrate, enable individual addressing of each laser element. Selectively added blocking layers and/or insulating layers are added to the structure to provide improved electrical and/or thermal isolation.

Abstract: A first current source applies a first current to an anode of a semiconductor laser, and a second current source either draws a second current from the anode of the semiconductor layer or supplies the second current to the anode of the semiconductor layer. A switched current source connected to the anode of the semiconductor layer selectively draws a third current from the anode of the semiconductor laser. The third current has a value corresponding to a difference between a peak value and a minimum value of a pulse current flow in the semiconductor laser during a recording operation. By drawing the third current from the anode of the semiconductor laser according to recording data, a high speed and high power recording operation can be effected.

Abstract: A laser system wherein, in order that a high-output and high-quality single mode of a cross sectional area larger than the beam diameter determined by the construction of a resonator can be obtained stably, although this has heretofore been impossible, there is used a coupling mirror provided with a partial reflection film and an antireflecting film, a laser beam mode is selected using the partial reflection film, a phase difference between laser beam portions caused by a difference in construction between the partial reflection film and the antireflecting film is compensated using a phase difference compensating apparatus, and there is formed an aperture whose diameter is set to a value of not larger than four times the diameter of the partial reflection film.

Abstract: A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of t

Abstract: A low-temperature Raman laser apparatus that avoids an increase in the pump light power, which would otherwise be needed under room temperature conditions, and eliminates the problems of instability of the equipment and complicatedness of the operation under liquid nitrogen cooling conditions and also lowers the cost, which has heretofore been high due to the consumption of liquid nitrogen, and that is capable of stably and efficiently effecting Raman conversion. The low-temperature Raman laser apparatus has a Raman cell (1) filled with a Raman conversion medium to convert the wavelength of incident pump light by the Raman conversion action of the Raman conversion medium. A heat absorbing member (2) or (3), through which a brine cooled by a brine refrigerator (4) circulates, is provided around the Raman cell (1) to cool the Raman conversion medium to a temperature in the range of from 200.degree. K. to 300.degree. K.

Abstract: A semiconductor laser including a substrate, means for reducing the lateral current flow and means forming the active elements, wherein said means for reducing the lateral current flow are composed by at least three layers of which the external ones are entirely doped and the internal layers are doped only in the zones lateral to the active element so that these layers reduce the side current flow.

Abstract: A DFB laser is provided with a top electrode divided symmetrically into two or three in-line separate elements through which a bias current is applied with a symmetrical distribution and through which a modulation current is applied with an antisymmetric (push-pull) distribution.

Abstract: The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive region is formed by an ion-implantation of proton in a downward oblique direction during a rotation of a semiconductor substrate with use of a photo-resist mask whose horizontal width is larger than that of the mesa structure. The high resistive region defines a light emitting area of an active layer, an inverse circular truncated cone like definition of a top cladding region and a circular truncated cone like definition of a bottom cladding region. The oblique angle ion-implantation permits the top cladding region to be free from any exposure of the ion-implantation thereby an electrical resistance of the device is reduced.

Abstract: A semiconductor laser array device includes a semiconductor laser chip array including a plurality of laser chips each having a prescribed chip width mounted on a bar-shaped supporting substrate and arranged parallel to a length direction of the substrate and determined in position in the optical axis direction of the laser chip and in the length and height directions of the substrate; a monitor photodiode array including a plurality of monitor photodiodes arranged in an array with the same period as that of the laser chip array mounted on the substrate and arranged parallel with the length direction of the substrate and determined in position in the optical axis direction of the laser chips and in the length direction and the height direction of the substrate; a plurality of lenses mounted on the substrate arranged in the length direction of the substrate with the same period as that of the laser chip array, the lens positions being determined in the optical axis direction of the laser chip and in the length

Abstract: A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation region is formed between the adjacent laser elements, which are defined by rib loaded waveguides created by etching mesas above a planar active multilayer waveguide. Separate electrical connections to the ribs, and a common electrical connection to the substrate, enable individual addressing of each laser element. Selectively added blocking layers and/or insulating layers are added to the structure to provide improved electrical and/or thermal isolation.

Abstract: According to a semiconductor laser device of the present invention, the thickness and carrier concentration of a current blocking layer are set so as to cause a punch through on the current blocking layer when the semiconductor laser device is driven at a current which is one to ten times as large as a maximum rated value of a DC driving current. Both a light absorbing layer and a photocurrent blocking layer are formed between the current blocking layer and a second clad layer in order to prevent a light turn-on phenomenon from occurring. The light absorbing layer contacts the second clad layer and is constituted of a semiconductor crystal of a p-type conductivity type, which is undoped or has a low concentration. The photocurrent blocking layer contacts the current blocking layer and is constituted of a semiconductor crystal of the p-type conductivity type. If the band gaps of the light absorbing layer, photocurrent blocking layer, and active layer are represented by E.sub.ab, E.sub.ocb, and E.sub.