Abstract: A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the effects of defect scattering at grain boundaries. The interface layers enhance magnetic polarization properties of ferromagnetic layers near interfaces to an insulating layer in a tunnel junction.

Abstract: A DRAM cell arrangement and method for manufacturing same, wherein a storage capacitor is connected via a first source/drain zone of a vertical selection transistor and a bit line. Since the storage capacitor and the bit line are arranged substantially above a substrate, the bit line can be manufactured of materials having high electrical conductivity, and materials having a high dielectric constant can be utilized for the storage capacitor. At least the first source/drain zone and a channel zone are parts of a projection-like semiconductor structure that is laterally limited by at least two sidewalls. A respective word line can be arranged at the two sidewalls. An element that prevents the drive of the selection transistor by this word line is arranged between the channel zone and one of the word lines.

Abstract: A method of forming an integrated circuit device includes forming a conductive layer on an integrated circuit substrate, and forming a buffer layer on the conductive layer opposite the integrated circuit substrate. The buffer layer and the conductive layer are patterned to provide a mesa structure including the patterned buffer and conductive layers. A conductive spacer is formed along a sidewall of the mesa structure, and a hemispherical grained silicon layer is formed on the conductive spacer opposite the sidewall of the mesa structure. The patterned buffer layer is then removed after the step of forming the hemispherical grained silicon layer. Related structures are also discussed.

Abstract: An interconnect structure includes in a first layer a clock line and a ground line running substantially parallel to the clock line, and a plurality of conductive regions lying in a second layer parallel to the first layer. The ground line is coupled to a source of ground potential. The conductive regions are aligned with the clock line and are disposed around a signal line routed in the second layer across the clock line. The conductive regions are electrically connected to the ground line, thereby forming a shield for the clock line that helps prevent clock signals propagated on the clock line from electromagnetically coupling with other signal lines. In one embodiment, a clock distribution network includes conductive regions (501, 503, 505 . . . ) in the metal layer below the clock line layer and two parallel ground lines (201, 203) in the same metal layer as the clock line (101). The conductive regions (501, 503, 505 . . .