Abstract: A Hall-effect device for detecting a magnetic flux intensity has a pair of input terminals connected respectively to a constant-voltage regulated power supply and an FET. The FET has a gate connected to the output terminal of an operational amplifier. One of the input terminals of the operational amplifier is connected to the junction between a variable resistor and a temperature-dependent variable resistor which jointly serve as a voltage divider. The temperature-dependent variable resistor has a temperature characteristic of resistance which is opposite to the temperature characteristic of sensitivity of the Hall-effect device. When the ambient temperature varies, the sensitivity of the Hall-effect device also varies, and so does the resistance of the temperature-dependent variable resistor. The divided voltage applied from the voltage divider to the operational amplifier drops, lowering the voltage applied to the gate of the FET.