Abstract: In forming a coating film of a fluororesin, e.g. polytetrafluoroethylene, on a metallic or nonmetallic surface by a physical vapor deposition technique, problems attributed to the necessity of intensely heating or bombarding the fluororesin as the evaporating source or target material are solved by using a molecular weight reduced fluororesin not higher than 5000 in molecular weight. It is best to use a low molecular weight fluororesin powder obtained by heating a high molecular weight fluororesin in presence of a fluorine source and precipitating the molecular weight reduced polymer from the reaction gas.

Abstract: A method of manufacturing a partially-glazed ceramic substrate for use in a thermal printing head. A ceramic substrate having a surface roughness of 0.2 .mu.m or less is provided. Subsequently, a glaze is applied to the ceramic substrate to form raised glaze regions having a transverse width of 1.0 mm or less and thickness of 100 .mu.m or less. The substrate and glaze are baked, and then a heating element is formed on the raised glaze regions.

Abstract: A low temperature process for repairing leakage-causing defects such as cracks, fissures, etc., in a cryogenic heat exchanger used in the liquefaction of a gas such as natural gas, especially one constructed from aluminum, involves the use of a low temperature, quick-curing filler composition to at least temporarily fill the defects and prevent further leakage. Thereafter, a sealant and, optionally, a metal patch is applied to and held in place against the sealant-treated damaged site employing a relatively slow-curing adhesive composition which exhibits good long-term sealing, and bonding performance if a patch is used, at cryogenic temperatures.

Abstract: A process for continuously coating a strand of continuous carbon filaments by means of a refractory carbide by reactive CVD deposition, which includes the step of causing the strand to travel under mechanical tension with a hermetic enclosure, simultaneously, introducing into the said enclosure a gas mixture consisting of hydrogen and of a volatile compound of an element capable of forming a refractory carbide; and heating the reaction mixture consisting of the strand and the gas mixture so that the formation of the carbide deposit on the filaments takes place by a chemical reaction between the carbon in these filaments and the gas mixture; and the reaction is self-regulated by the diffusion of carbon through the layer of carbide already formed.

Abstract: An optical coating which is stable upon sustained exposure to water vapor is provided by a low-temperature photochemical vapor deposition process. First, there are provided a first vapor phase reactant containing silicon, a second selected vapor phase reactant, and an oxygen-containing precursor which are capable of interacting upon radiation inducement to form the corresponding oxides of the vapor phase reactants. A chosen substrate is exposed to the first and second selected vapor phase reactants in predetermined proportions and the chosen oxygen-containing precursor in the presence of radiation of a predetermined wavelength to induce a reaction to form a coating on the substrate. The coating comprises silicon dioxides containing a predetermined proportion of the second oxide, such as lead oxide. The coating maintains stable optical properties upon sustained exposure to water vapor. Graded index optical elements as well as quarterwave stack structure may be formed by this process.

Abstract: Protective coatings are applied to substrate metals by coating the metal surface, e.g. by dipping the substrate metal in a molten alloy of the coating metals, and then exposing the coating at an elevated temperature to an atmosphere containing a reactive gaseous species which forms a nitride, a carbide, a boride or a silicide. The coating material is a mixture of the metals M.sub.1 and M.sub.2, M.sub.1 being zirconium and/or titanium, which forms a stable nitride, carbide, boride or silicide under the prevailing conditions. The metal M.sub.2 does not form a stable nitride, carbide, boride or silicide. M.sub.2 serves to bond the carbide, etc. of M.sub.1 to the substrate metal. Mixtures of M.sub.1 and/or M.sub.2 metals may be employed. This method is much easier to carry out than prior methods and forms superior coatings. Eutectic alloys of M.sub.1 and M.sub.2 which melt substantially lower than the melting point of the substrate metal are preferred.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A method is disclosed for producing a low emissivity metal oxide film on a glass surface within a nonoxidizing atmosphere inside a float bath by applying a metal-containing coating reactant in vapor form in the pressure of oxygen to the top surface of a float glass ribbon while the bottom surface is maintained in contact with a molten metal bath in a nonoxidizing atmosphere at a temperature sufficient to thermally react said reactant to form a metal oxide film on the glass surface.

Abstract: A method of producing a penetrative binder product for stabilizing absorptive granular material. The binder product comprising a combination of resin asphaltene residuum, paving grade asphalt, and a non-evaporative diluent to yield a penetrative binder which neither pollutes the air or loses significant viscosity during application to the absorptive granular material to be stabilized, the diluent further acting to inhibit the capillary movement of moisture in material underlying the originally penetrated depth.

Abstract: A ground impregnation process which is disclosed herein comprises injecting an alkaline ground impregnating material, with carbon dioxide gas passed through blowing nozzles joining said impregnating material, into a ground. In this process, the pressure of carbon dioxide and the opening size of the blowing nozzle are determined to provide a constant amount of carbon dioxide gas blown, irrespective of a variation in ground pressure. In this manner, the carbon dioxide gas joins the alkaline ground impregnating material at a given ratio.

Abstract: A process is disclosed for the formation of amorphous multi-metallic alloy coatings. More specifically, a chemical vapor deposition process is described wherein precursor compounds are induced to decompose upon a substrate under controlled parameters so as to form a coating on the substrate that is a substantially amorphous multi-metallic alloy. Preferred amorphous alloy compositions are also taught that are ideally synthesized by the claimed process.

Abstract: Layers containing silicon and oxygen are formed by means of low pressure chemical vapor deposition. As a source for silicon and oxygen, tetraethylorthosilicate (TEOS) is used which is drawn into the low pressure area of the deposition apparatus in liquid form and evaporated there. If necessary, oxygen is introduced into the low pressure area. The reactants are directed into the reaction zone which has been heated to a predetermined temperature, and reacted there. The reaction product is deposited onto the substrates provided therein. If the deposited layer is to comprise still further elements, liquid substances containing such elements are mixed with the liquid TEOS prior to being drawn into the evaporating area, in a ratio adapted to the desired layer composition. Both with respect to layer thickness and composition the layers deposited are highly homogeneous.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, is held on a wafer holder in a reaction chamber under reduced pressure, WF.sub.6 gas is introduced into the reaction chamber so that a first metallic film of W is formed on the substrate in the via hole. The additional WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film. The temperature difference is created because of the differences of the absorption ratios of infrared components of the light between the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.

Abstract: A pyrolytic boron nitride article of the invention has uniform structure and has 0.5 or less nodules/cm.sup.2 in average all through the overall surface of the article and 2 or less nodules in any portion of the unit square centimeter on the surface of the article. The pyrolytic boron nitride article is produced by depositing boron nitride through a vapor phase, using a boron halide gas and an ammonia gas as the starting materials. Upon production, the ammonia gas or a gas mixture containing the ammonia gas is not contacted directly with graphite at 300.degree. to 1850.degree. C.

Abstract: A method for depositing a wear resistant composite ceramic coating on a cemented carbide or hard ceramic substrate. A gas mixture is passed over the substrate, including a halide vapor of Al, Zr, or Y and one or more oxidizing gases at about 900.degree.-1250.degree. C. for the cemented carbide or about 900.degree.-1500.degree. C. for the ceramic and between about 1 torr and about ambient pressure. During the deposition of the oxide, a different halide of Al, Zr, or Y is pulsed into the gas mixture. The parameters are controlled to deposit a fully dense, adherent, wear resistant, laminated oxide coating about 0.3-20 microns thick on the substrate having at least three layers each about 0.1-3 microns thick and each predominantly of a different material than that of the adjacent layers. Optionally, the process may be controlled to produce at least one layer in which discrete particles of the material predominantly in an adjacent layer are present in a matrix of the predominant material of the layer.

Abstract: A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: There is disclosed herein a method of using metal salts in preventing or reducing color shift in certain ink coatings comprising metal-containing organic pigments which are top-coated in a wet-on-wet mode with clear coatings comprising water-reducible compositions.

Abstract: Vapor deposition crucible is provided at least twenty degrees from the central normal to a smooth surface of a screen on which luminescent material is to be deposited. During deposition the surface is rotated relative to the source to produce a layer having a regular structure and a good fill factor.

Abstract: A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

Abstract: A copper film is formed by bringing the vapor of an inorganic compound of copper, such as cuprous nitrate that vaporizes upon heating, into contact with a reducing gas in the reaction chamber, so that copper ions are reduced into metal copper that is to be deposited on a substrate. The obtained copper film exhibits very good step coverage and contains very little impurities, lending itself well for forming interconnections of a semiconductor device that has a high degree of integration.