Abstract: An apparatus and method for making an acoustic filter package where the apparatus includes a base layer; a support layer disposed on the base layer; a piezoelectric structure disposed on the support layer; wherein the piezoelectric structure comprises: a piezoelectric layer; a top electrode on a top surface of the piezoelectric layer; a bottom electrode on a bottom surface of the piezoelectric layer; a contact pad coupled to the bottom electrode that extends through an opening in the piezoelectric layer and is coupled to the bottom electrode or the top electrode; and a corrosion resistant pad disposed on the contact pad; and a capping structure disposed on the piezoelectric structure.

Abstract: The present invention relates to a filter correction unit (203a) as well as an RF filter including the correction unit for use in radio frequency transmission lines including a band pass filter (201) having input and output interfaces mounted in the signal transmission line. The filter (201) is chosen so as to transmit signals within a predetermined frequency range, the quality factor of the filter having predetermined limitations generating a known distortion to the signal. The correction unit (203a) has a first bus connected to said transmission line and to said filter, wherein the correction unit comprises at least one surface acoustic wave (SAW) transducer (204a-n), each transducer having two electrodes on a piezoelectric substrate where a first electrode is connected to said first bus and the other electrode connected to a second bus, the SAW transducer being adapted to distort a transmitted signal with a factor being the inverse of said known distortion of the filter (201).

Abstract: Power-combining devices, and more particularly spatial power-combining and related structural arrangements are disclosed. Such structural arrangements involve mechanical connections between center waveguide sections and input and/or output coaxial waveguide sections that provide scalable structures for different operating frequency bands, improved mechanical connections, and/or improved assembly. Exemplary structural arrangements include structures that extend through center waveguide sections and into input and/or output coaxial waveguide sections, integrated mechanical structures within the center waveguide section, compression fit arrangements, dielectric inserts arranged within channels of coaxial waveguide sections, and/or various combinations thereof.

Abstract: An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first piezoelectric plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.

Abstract: An acoustic resonator includes a piezoelectric plate with a back surface attached to a substrate. An interdigital transducer (IDT) including interleaved fingers is formed on the front surface of the piezoelectric plate, the IDT comprising multiple copies of a unit cell juxtaposed along a length of the IDT. Each unit cell includes a first pitch/mark zone having a first pitch P1 between adjacent fingers and a first mark M1 and a second pitch/mark zone having a second pitch P2 and a second mark M2, where P2 is not equal to P1 and M2 is not equal to M1. A radio frequency signal applied to the IDT causes the first pitch mark zone and the second pitch/mark zone to excite a same shear primary acoustic mode in the piezoelectric plate.

Abstract: A surface acoustic wave (SAW) device includes a substrate; an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes formed on the substrate, wherein the interdigital electrodes includes central portions, end portions, and intermediate portions between the end portions and the lead-out portions, and a thickness of the interdigital electrodes at the end portions is greater than a thickness of the interdigital electrodes at the central portions and the intermediate portions, thereby forming protruding structures at the end portions of the interdigital electrodes; a protective layer formed on the protruding structures at the end portions of the interdigital electrodes; a first temperature compensation layer formed on the protective layer; a second temperature compensation layer formed on the first temperature compensation layer and on the central portions and the intermediate portions of the interdigital electrodes; and a passivation layer formed on the second temperature co

Abstract: A thin film SAW device comprises a carrier substrate (CA), a TCF compensating layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between piezoelectric layer and TCF compensating layer to further reduce the TCF. The material properties of the functional layer match those of the piezoelectric layer in view of acoustic velocity, density and stiffness such that they do not deviate from each other by more than 10% without having piezoelectric effect. The functional layer my be of the same crystalline constitution as the useful piezoelectric layer but without piezoelectric properties.

Abstract: A multiplexer includes an antenna terminal, an inductance element, and a transmission-side filter and a reception-side filter connected to the antenna terminal. The transmission-side filter has a first pass band, and the reception-side filter has a second pass band. The reception-side filter is connected to the antenna terminal through the inductance element. A center frequency of the second pass band is higher than a center frequency of the first pass band. The reception-side filter includes parallel arm resonance portions including a first parallel arm resonance portion connected closest to the inductance element. An electrostatic capacitance of the first parallel arm resonance portion is larger than an electrostatic capacitance of any other parallel arm resonance portions.

Abstract: A multiplexer includes a common terminal, a first filter connected to the common terminal, a wiring line connecting the common terminal and the reception filter to each other, a second filter connected to a connection node on the wiring line, a third filter connected to a connection node on the wiring line, a wiring line connecting the connection node and the transmission filter to each other, a wiring line connecting the connection node and the first filter to each other, and an inductor connected between a wiring region of the wiring line that extends from the connection node to the first filter and the ground or between the wiring line and the ground. The length of a portion of the wiring line extending from the common terminal to the connection node is longer than the length of a portion of the wiring line extending from the common terminal to the connection node.

Abstract: An extractor includes an external connection terminal, a common terminal, input-output terminals, a band elimination filter that is connected to the common terminal and the first input-output terminal input-output terminal and that uses a first frequency band as a stop band, a band pass filter connected to the common terminal and the second input-output terminal and that uses a second frequency band overlapped with at least a portion of the first frequency band as a pass band, and an inductor connected on a path connecting the common terminal to the external connection terminal. The band elimination filter includes series arm resonators located on a series arm connecting the common terminal to the input-output terminal and an inductor that is located on the series arm between the series arm resonator and the first input-output terminal. The inductor is inductively coupled to the inductor.

Abstract: An apparatus includes an RF apparatus, and a wideband multi-band matching balun. The wideband multi-band matching balun includes a multi-band balun, which includes at least one three-element frequency-dependent resonator (TEFDR). The wideband multi-band matching balun further includes a differential-to-differential matching circuit coupled to the RF apparatus. The differential-to-differential matching circuit includes at least one TEFDR.

Abstract: A matching circuit performs output impedance matching for an amplifier that amplifies an input signal and outputs an amplified signal. The matching circuit includes a low pass filter and a high pass filter. The ground of the low pass filter and the ground of the high pass filter are isolated from each other.

Abstract: A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.

Abstract: A multiplexer (1) includes: a filter (13L) that is arranged between a common terminal (100) and an input/output terminal (130) and that has a first pass band; a filter (12H) that is arranged between the common terminal (100) and an input/output terminal (120), that is formed of at least one acoustic wave resonator, and that has a second pass band located at a higher frequency than the first pass band; and a capacitor (C2) that is serially arranged on a connection path between the common terminal (100) and the filter (12H). When the filter (12H) is regarded as a capacitance, the Q value of the capacitor (C2) in the first pass band is higher than the Q value of the capacitance in the first pass band.

Abstract: A filter device has a first piezoelectric plate spanning a first and second cavity of a substrate. A first and second interdigital transducer (IDT) are on a front surface of the first piezoelectric plate over the first and second cavity. A dielectric layer is formed on the first piezoelectric plate and covers the first IDT and second IDT. A second piezoelectric plate is bonded to a front surface of the dielectric layer over the first cavity and the second cavity. A second dielectric layer is formed on a front surface of the second piezoelectric plate over the first cavity but not over the second cavity. The thickness of the dielectric layer, the first piezoelectric plate and the second piezoelectric plate can be selected to tune a shunt resonator over the first cavity and a series resonator over the second cavity.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A temperature compensation layer can be positioned between one of the high velocity layers and the piezoelectric layer. The acoustic wave device can be arranged to generate a boundary acoustic wave having a higher velocity than a respective acoustic velocity of each of the high velocity layers.

Abstract: A surface acoustic wave device includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Abstract: Aspects of this disclosure relate to an acoustic wave filter with an acoustic wave resonator arranged to concentrate a transverse spurious mode at a frequency. Such an acoustic wave resonator can have a narrow aperture to concentrate the transverse spurious mode. The transverse spurious mode can increase steepness of a skirt of the acoustic wave filter. Related methods, acoustic wave devices, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.

Abstract: Embodiments of this application provide a balance-unbalance conversion apparatus. The apparatus includes an insulation substrate, a first microstrip, a second microstrip, and a conductive ground. The first microstrip includes a first balance signal connection section, a first impedance matching section, and an unbalance signal connecting section. The unbalance signal connecting section is configured to transmit an unbalance signal. The second microstrip includes a second balance signal connecting section, a second impedance matching section, and a ground section. The second balance signal connecting section is configured to transmit a second component of the balance signal. The ground section is configured to connect to a ground signal. The first microstrip, the second microstrip, and the conductive ground are all disposed on the insulation substrate, and a cross-sectional area of at least a part of the first microstrip and/or at least a part of the second microstrip is gradient.