Patents Examined by Sarah Michelle Bulger
  • Patent number: 11881674
    Abstract: A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: January 23, 2024
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kei Kaneko, Tsutomu Kakuno, Rei Hashimoto, Shinji Saito