Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming an epitaxial structure having a first doping type over a first portion of a semiconductor substrate. A second portion of the semiconductor substrate is formed over the epitaxial structure and the first portion of the semiconductor substrate. A first doped region having the first doping type is formed in the second portion of the semiconductor substrate and directly over the epitaxial structure. A second doped region having a second doping type opposite the first doping type is formed in the second portion of the semiconductor substrate, where the second doped region is formed on a side of the epitaxial structure. A plurality of fins of the semiconductor substrate are formed by selectively removing portions of the second portion of the semiconductor substrate.

Abstract: Provided herein are dyes, dye-sensitized solar cells, and sequential series multijunction dye-sensitized solar cell devices. The dyes include an electron deficient acceptor moiety, a medium electron density ?-bridge moiety, and an electron rich donor moiety comprising a biaryl, a substituted biaryl, or an R1, R2, R3 substituted phenyl where each of R1, R2, and R3 independently comprises H, aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, OR4, N(R5)2, or a combination thereof; each R4 independently comprises H, alkyl, aryl, alkyl substituted aryl, alkoxy substituted aryl, or a combination thereof; and each R5 independently comprises aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, or a combination thereof. The solar cells include a glass substrate, a dye-sensitized active layer, and a redox shuttle.

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

Abstract: Micro device optical inspection and repairing equipment adopting an adhesion device is provided. The micro device optical inspection and repairing equipment includes a carrying stage, an optical inspection module and at least one adhesion device. The optical inspection module is arranged corresponding to the carrying stage so as to capture image information and obtain a position coordinate from the image information. The adhesion device includes a main body and an adhesive portion. The adhesive portion is connected to the main body. The adhesion device can move to a target position of the carrying stage according to the position coordinate. The main body is adapted to drive the adhesive portion to move to the target position along a moving axis. An optical inspection and repairing method adopting the micro device optical inspection and repairing equipment is also provided.

Abstract: A pixel arrangement including: first groups of sub-pixels arranged in a first direction, each of the first groups including first sub-pixels and third sub-pixels arranged alternately; and second groups of sub-pixels arranged in the first direction, each of the second groups including third sub-pixels and second sub-pixels arranged alternately. The first groups and the second groups are alternately arranged in a second direction perpendicular to the first direction. The first groups and the second groups are arranged to form third groups of sub-pixels arranged in the second direction and fourth groups of sub-pixels arranged in the second direction. The third groups and the fourth groups are alternately arranged in the first direction. Each of the third groups includes first sub-pixels and third sub-pixels arranged alternately. Each of the fourth groups includes third sub-pixels and second sub-pixels arranged alternately.

Abstract: The instant disclosure includes an implanting apparatus and a method thereof. The implanting apparatus has a chuck configured to carry a substrate is rotated a number of times at an angle during ion implantation. In this way, masks used during semiconductor fabrication is reduced.

Abstract: A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over an upper surface of the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.

Abstract: The present disclosure provides a carrying apparatus and a carrying method, the carrying apparatus includes: a carrying part configured to carry an object to be carried; an adhesive assembly disposed on the carrying part, a viscosity of the adhesive assembly is variable, and the carrying apparatus is configured to selectively adhere to or separate from the object to be carried according to a change of the viscosity; and a supporting part disposed on the carrying part and configured to support the object to be carried so that the object to be carried separates from the carrying part.

Abstract: The present disclosure provides a method and system for scheduling pieces of materials based on a real-time status of a device. Scheduling rules for scheduling the pieces of materials are obtained according to determined parameters. It is determined whether all designated transmission and process tasks of the pieces of materials are completed. If the designated transmission and processing tasks of the pieces of materials are completed, terminating the scheduling of the pieces of materials. If the designated transmission and processing tasks of the pieces of materials are not completed, each of the scheduling rules for scheduling the pieces of materials according to real-time status information of the device are traversed, and according to a traversing result, operation instructions corresponding to the scheduling rules for scheduling the pieces of materials are executed.

Abstract: A semiconductor package includes a substrate, an electronic component and a first dilatant layer. The electronic component is disposed on the substrate. The electronic component has a top surface, a bottom surface opposite to the top surface and a lateral surface extending between the top surface and the bottom surface. The first dilatant layer is disposed on the top surface of the electronic component and extends along the lateral surface of the electronic component.

Abstract: A deviation amount is a difference between a first error that occurs when an article is placed on a first transfer destination by a first transport vehicle and a second error that occurs when the article is placed on a second transfer destination by the first transport vehicle. An nth error that occurs when the article is placed on an nth transfer destination other than the first transfer destination and the second transfer destination is acquired. In an mth transport vehicle other than the first transport vehicle, a stop position of an mth traveling body is corrected by the nth error and an mth-1 error occurring when the article is placed on the first reference platform, or by the nth error and an mth-2 error as well as the deviation amount, the mth-2 error occurring when the article is placed on the second reference platform.

Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

Abstract: A method for manufacturing a polymer capacitor and a polymer capacitor are disclosed. In an embodiment a method for manufacturing a polymer capacitor includes winding an anode foil, a cathode foil and separator foils to form a winding, impregnating the winding with a dispersion comprising a solvent and a polymer precursor and extracting the solvent from the winding by supercritical fluid extraction.

Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has multiple grounding electrodes, grounding pads located at its edges, and a polymer thin film including multiple areas each covering only one grounding electrode. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a shadow mask below the poling source, and a Z-elevator to raise the workpiece carrier toward the shadow mask and poling source. When the workpiece in the workpiece carrier is raised to contact the underside of the shadow mask, multiple openings of the shadow mask expose only the corresponding multiple thin film areas of the workpiece to the plasma; meanwhile, conductive grounding terminals on the underside of the shadow mask electrically connect the grounding pads of the workpiece with carrier electrodes on the workpiece carrier, to ground the workpiece.

Abstract: A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.

Abstract: A method of preparing an anode active material for a pseudocapacitor is provided. According to the present invention, a method of preparing an anode active material for a pseudocapacitor, which enables expression of high specific capacitance and excellent output characteristics, is provided.

Abstract: A thin-film transistor (TFT) photodetector for a display panel is provided. The TFT photodetector includes an amorphous transparent substrate used as the display panel, a source formed of amorphous silicon or polycrystalline silicon on the transparent substrate, a drain formed of amorphous silicon or polycrystalline silicon, opposite to the source on the transparent substrate, an active layer formed between the source and the drain and having a current channel formed between the source and the drain, an insulating oxide film formed on the source, the drain, and the active layer, and a light receiving part formed on the insulating oxide film and configured to absorb light.

Abstract: A display panel includes a display substrate, a chip-on-film provided at a bezel away from a display face of the display substrate, an insulation adhesive filled between the display substrate and the chip-on-film, and an integrated circuit chip fixed at a side of the chip-on-film away from the display substrate, the chip-on-film is fixed at the bezel away from the display face of the display substrate by the insulation adhesive, at the bezel there are a plurality of connection holes penetrating through the display substrate and the insulation adhesive, and conductive material filled in the respective connection holes, and signal lines at the bezel at the display face of the display substrate are connected with connection terminals provided at a side of the chip-on-film facing the display substrate via the conductive material.

Abstract: A semiconductor device of the embodiment includes a semiconductor layer including a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a sixth semiconductor region, a first trench, and a second trench, a first gate electrode in the first trench; a second gate electrode in the second trench; a first electrode on a first face side; a second electrode on a second face side; a first electrode pad connected to the first gate electrode; and a second electrode pad connected to the second gate electrode. The semiconductor device includes a first region including the first semiconductor region; a second region including the second semiconductor region; and a third region provided between the first region and the second region, the third region having a density of the second trench higher than that of the first region.

Abstract: The present invention is directed to a method for pre-lithiation of negative electrodes during lithium loaded electrode manufacturing for use in lithium-ion capacitors. There is provided a system and method of manufacture of LIC electrodes using thin lithium film having holes therein, and in particular, to the process of manufacturing lithium loaded negative electrodes for lithium-ion capacitors by pre-lithiating electrodes with thin lithium metal films, wherein the thin lithium metal films include holes therein, and the lithium loaded negative electrodes are manufactured using a roll-to-roll lamination manufacturing, process.