Abstract: The present invention provides a lamp anneal apparatus comprising: a chamber; a wafer holder accommodated in the chamber for holding a wafer to be annealed; a first set of lamps provided over a top wall of the chamber; and a second set of lamps provided under a bottom wall of the chamber, wherein the wafer holder has a plurality of contact temperature sensors which are positioned under the wafer so that the contact temperature sensors receive substantially no radiation from lamps, and the contact temperature sensors are in contact with a bottom surface of the wafer for supporting the wafer and detecting temperatures at different points of the wafer.

Abstract: In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.