Abstract: An IC device includes a die and a first package interposer stacked over a second package interposer. The IC device includes a first conductive connection from a first bond pad of the die directly to a bond pad of the first interposer and a second conductive connection from a second bond pad of the die directly to a bond pad of the second interposer. Another IC device includes a second die stacked over a separate first die and a first package interposer stacked over a separate second package interposer. The first die is stacked over the first interposer. A first conductive connection exists from a bond pad of the first die directly to a bond pad of the first interposer and a second conductive connection exists from a bond pad of the second die directly to a bond pad of the second interposer.

Abstract: A semiconductor device can be manufactured with a high non-defect ratio, making it possible to easily guarantee the KGD (Known-Good-Die) of semiconductor chips, when configuring one packaged semiconductor device on which a plurality of semiconductor chips is mounted. Utilizing each semiconductor chip is made possible without limits on terminal position, pitch, signal arrangement, and so on. Protrusions provided to a semiconductor chip mounted sealing sub-board are attached to a package substrate. A plurality of semiconductor bare chips is disposed in a space formed between the semiconductor chip mounted sealing sub-board and the package substrate, making wiring possible.

Abstract: A printed circuit board and method thereof and a solder ball land and method thereof. The example printed circuit board (PCB) may include a first solder ball land having a first surface treatment portion configured for a first type of resistance and a second solder ball land having a second surface treatment portion configured for a second type of resistance. The example solder ball land may include a first surface treatment portion configured for a first type of resistance and a second surface treatment portion configured for a second type of resistance. A first example method may include first treating a first surface of a first solder ball land to increase a first type of resistance and second treating a second surface of a second solder ball land to increase a second type of resistance other than the first type of resistance.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.

Abstract: In one embodiment, the stacked package includes a first chip disposed over a package substrate. The first chip has at least one first chip dummy pad, and the first chip dummy pad is not electrically connected to circuits of the first chip. A first dummy bonding wire is connected to the first chip dummy pad and the package substrate. A second chip is disposed over at least a portion of the first chip, and the second chip has at least one second chip bonding pad. A first bonding wire is electrically connected to the second chip bonding pad and the first dummy bonding wire.

Abstract: Semiconductor chip assemblies incorporating flexible, sheet-like elements having terminals thereon overlying the front or rear face of the chip to provide a compact unit. The terminals on the sheet-like element are movable with respect to the chip, so as to compensate for thermal expansion. A resilient element such as a compliant layer interposed between the chip and terminals permits independent movement of the individual terminals toward the chip driving engagement with a test probe assembly so as to permit reliable engagement despite tolerances.

Abstract: A semiconductor die attach system adapted for attaching a semiconductor die to a substrate is provided. A metallic buffer component is disposed between the substrate and the semiconductor die to withstand stresses created from thermal cycling of the substrate and the die. The metallic buffer component is sealed to the substrate with a layer of solder. The layer of solder is provided to dissipate stresses created by thermal cycling of the substrate and the die. The die is sealed to the buffer with a silver-glass adhesive.