Patents Examined by Sheine Beek
  • Catalytic breakdown of reactant gases in chemical vapor deposition
    Patent number: 6040010
    Abstract: Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface temperature of the semiconductor wafer needed to form the film thereon. The activated gas precursors can include hydrogen or hydrogen-bearing gases. The catalysts can be selected from ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
    Type: Grant
    Filed: September 10, 1996
    Date of Patent: March 21, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Anand Srinivasan, Gurtej S. Sandhu