Abstract: A fluorophor comprising, as a main component, an ?-type sialon crystal which contains at least an A element (wherein A represents one or more elements selected from among Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Er, Tm and Yb), an M element (wherein M represents one or more elements selected from among Li, Na, Mg, Ca, Y, La, Gd and Lu), Si, Al, oxygen and nitrogen, and is represented by the general formula: (Mx, Ay)(Si12?(m+n)Alm+n)(OnN16?n) (1) m=?M×x+?A×y (2) 0.2?x?2.4 (3) 0.001?y?0.4 (4) and 0.5×m<n?4 (5). The fluorophor is reduced in the lowering of brightness, and is useful for a white color LED and the like.

Abstract: A method for fabricating a surface-conduction electron emitter includes the steps of: (a) providing a substrate; (b) disposing two lower layers on the surface of the substrate, the two lower layers are parallel and apart from each other; (c) disposing a plurality of carbon nanotube elements on the lower layers; (d) disposing two upper layers on the two lower layers, and thereby, sandwiching the carbon nanotube elements therebetween; and (e) forming a micro-fissure between the carbon nanotube elements.

Abstract: A display device includes an insulating substrate having a display region formed with a display unit, a wire having power supply, data, and gate lines, a circuit board connected to a first edge of the substrate parallel to the gate line and supplying common and driving voltages to the display unit, a driving voltage supplying part provided between a second edge opposite the first edge and the display region, and connected to the power supply line, a driving voltage transmitting part connecting the circuit board to the driving voltage supplying part, and a common voltage supplying part formed between the circuit board and the display region supplying the common voltage to the display unit.

Abstract: The present invention aims to ensure luminosity while improving evacuation characteristics in a plasma display panel. First ribs (112) that separate a plurality of cells from each other and second ribs (113) are formed in stripe patterns so as to intersect with each other on a surface of a first substrate (107), a surface of a second substrate opposes tops of the first ribs, and a height of the ribs at intersections (112b) of the first and second ribs intersect is lower than other parts of the first ribs (112a).

Abstract: An electrodeless lamp assembly includes a tubular lamp envelope, at least one core having a closed-loop body disposed so as to surround a core mounting portion of the tubular lamp envelope. The core includes an indented coil winding section formed by an indentation formed in an inner side section of the closed-loop body adjacent to a centrally located opening. The electrodeless lamp assembly further includes an induction coil wound around the indented coil winding section of the core.

Abstract: A light emission device and a display device having the light emission device are provided. The light emission device includes first and second substrates that are arranged to face each other, an electron emission unit that is located on a first surface of the first substrate facing the second substrate and has electron emission regions and driving electrodes, a light emission unit that is located on a surface of the second substrate and has an anode electrode and one or more phosphor layers, and a surface heat generation unit that is located on a second surface (or outer surface) of the first substrate facing away from the second substrate to control a temperature of the first substrate using a resistive layer having a positive temperature coefficient (PTC) property.

Abstract: A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.

Abstract: A silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device and associated fabrication process are presented. The method provides a substrate bottom electrode, and forms a plurality of Si nanocrystal embedded SiOx film layers overlying the bottom electrode, where X is less than 2. Each SiOx film layer has a Si excess concentration in a range of about 5 to 30%. The outside film layers sandwich an inner film layer having a lower concentration of Si nanocrystals. Alternately stated, the outside Si nanocrystal embedded SiOx film layers have a higher electrical conductivity than a sandwiched inner film layer. A transparent top electrode is formed over the plurality of Si nanocrystal embedded SiOx film layers. The plurality of Si nanocrystal embedded SiOx film layers are deposited using a high density plasma-enhanced chemical vapor deposition (HD PECVD) process. The HD PECVD process initially deposits SiOx film layers, which are subsequently annealed.

Abstract: When a phosphor for ultraviolet excitation or visible light excitation is excited by light having wavelengths in a range of 100 to 500 nm and emission colors of the phosphor are represented by xy coordinates, the phosphor has a difference between a maximum value and a minimum value of x coordinates and a difference between a maximum value and a minimum value of y coordinates which are respectively 0.020 or less. A light-emitting device includes a light-emitting part which contains at least such a phosphor. The light-emitting part emits visible light when irradiated with ultraviolet or visible light emitted from an excitation source.

Abstract: An electron beam irradiator capable of performing electron beam irradiation in a wide area at a high current density with a field emitter tip. The electron beam irradiator comprises: a vacuum chamber having a beam irradiation window formed longitudinally in an outer periphery of the vacuum chamber; a cathode placed centrally and longitudinally inside the vacuum chamber, and having a field emitter tip formed on the cathode, corresponding to the beam irradiation window; and a high voltage supply placed at one end of the vacuum chamber, and adapted to apply high voltage toward the cathode. The electron beam irradiation can be made in a wide area without using an electromagnet as well as in a high current density without using a heater such as a filament or an additional power supply, thereby to ensure a simplified structure as well as a reduced size.

Abstract: A large area hybrid photomultiplier tube that includes a photocathode for emitting photoelectrons in correspondence with incident light, a semiconductor device having an electron incident surface for receiving photoelectrons from the photocathode, and a cone shaped container. The container has a first opening and a second opening. The photocathode is disposed at the first opening, and the semiconductor device is disposed at the second opening.