Abstract: A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

Abstract: A resistor located above the semiconductive substrate of an integrated circuit chip can be made smaller than prior art resistors because no area is allocated for resistor contacts. During manufacture, a resistive strip having the width of the intended resistor is formed. A photoresist mask protects the top and sides of the resistive strip where the resistor is located, and etching exposes the ends but not the top and sides of the resistor. Contact to the resistor occurs at the upwardly extending (usually near vertical) end surfaces of the resistor.

Abstract: A HACT device employing a thin-film overlay of a more strongly piezoelectric material can operate as a delay line and as a tapped delay line, or transversal filter, while requiring less total power for the SAW clock signal. The increased electrical potential per unit total SAW power thus realized facilitates coupling between the total SAW energy and the mobile charge carriers. Some materials systems, such as a GaAs substrate and a ZnO thin-film overlay, will require an intervening thin-film dielectric layer in between the HACT substrate and epitaxial layers and the thin-film piezoelectric overlay. This may be necessitated by chemical, semiconductor device processing, or adhesion incompatibilities between the substrate material and the thin-film overlay material.

Abstract: A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A two-layer semiconductor material structure is provided, one layer being n type and the other layer being p type. A thin pencil of ions of n type is implanted through the n type layer into the p type layer, through a small aperture in a mask layer that overlies the n type layer. The p type material is then etched away, leaving the n type ion profile and the n type layer as a cantilevered microtip. The n type semiconductor layer may be replaced by a layer of any material that resists etching by the selected etchant.

Abstract: A multi-stand hot strip rolling mill has a pinch roll assembly downstream of the last stand and before the coiler and a shapemeter roll is located between the last stand and the pinch roll assembly so as to engage with the strip.

Abstract: A multi-pass rolling method which permits a multi-pass rolling-mill stand to perform multi-path rolling and still stabilize the rolling operation by preventing lateral deviation movement of a metal workpiece being rolled. The rolling-mill stand has three or more work rolls arranged one above the other and the workpiece is simultaneously rolled at two or more points by at least one of the work rolls. Directly or indirectly roll gaps are detected on the work and drive sides of at least one pass by sensors. A difference signal from the output signals of the sensors is obtained thereby determining a roll gap difference. Control devices are provided which are responsive to the difference signal for independently changing the roll gaps on the work and drive sides.

Abstract: A conventional planarity control system with feedback loop is used but augmented by a lead function having its principal input actually occuring rolling force and variations thereof under consideration of the statistical relationship between rolling force and bending force of working, intermediate or support rolls.