Abstract: An electrically programmable and eraseable memory element using source-side hot-electron injection. A semi-conductor substrate of a first conductivity type is provided with a source region and a drain region of opposite conductivity type and a channel region of the first conductivity type extending between the source and drain regions. A control gate overlies the channel region, and a floating gate insulated from the control gate, the source and drain regions and the channel region is located either directly underneath the control gate over the channel region, partially underneath the control gate over the channel region or spaced to the source side of the control gate. A weak gate control region is provided in the device near the source so that a relatively high channel electric field for promoting hot-electron injection is created under the weak gate control region when the device is biased for programming.

Abstract: An MOS read only memory or ROM is formed by a process compatible with standard P or N channel metal gate manufacturing methods. The ROM is programmed at a late stage of the process after the metal level of contacts and interconnections has been deposited and patterned. Address lines and gates are polysilicon with an overlying patterned metal layer and output and ground lines are defined by elongated heavily doped regions. Thin gate oxide is formed for every gate position, rather than for only the selected gates as in the prior standard programming method. Each potential MOS transistor in the array is programmed to be a logic "1" or "0" by ion implanting through the polysilicon gates where metal has been removed, using photoresist as a mask.

Abstract: An apparatus for and a method of optically recording or writing data into a thermoplastic layer is disclosed. The recording medium is fabricated as an integral part of the face of a cathode ray tube (CRT) and includes a layer of thermoplastic material that is thermoplastically responsive to a heating light beam having a wavelength within the infrared (IR) range and that is a dielectric capable of storing charges corresponding to a data-containing charging (electron) beam. The thermoplastic layer is first selectively exposed to the charging (electron) beam for spatially selectively electrically charging the exposed surface of the thermoplastic layer and is then softened by the heating (IR) beam causing the charged, softened surface to distort under the forces of the data-bearing charge.