Abstract: A polishing pad is described. The polishing pad includes a surface having plural recess portions, and a substrate is polished by the surface. In the pad, an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 ?m or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more.

Abstract: Disclosed are a radio frequency electrode assembly for a plasma processing apparatus, and a plasma processing apparatus, wherein the radio frequency electrode assembly for a plasma processing apparatus comprises: a base in which a first fluid passage is provided, the first fluid passage being configured for connecting to a first fluid source; an electrostatic chuck disposed on the base; a focus ring disposed peripheral to the electrostatic chuck; a heat conducting ring disposed around the base, the heat conducting ring enclosing at least part of the base, the heat conducting ring being disposed below the focus ring, a second fluid passage being provided in the heat conducting ring, the second fluid passage being connected to a second fluid source, heat conduction being enabled between the heat conducting ring and the focus ring. The plasma processing apparatus can adjust polymers distribution in the edge area of the to-be-processed substrate.

Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

Abstract: A slurry blending tool may include a blending tank to receive and blend one or more materials into a slurry, and at least one inlet pipe connected to the blending tank and to provide the one or more materials to the blending tank. The at least one inlet pipe may vertically enter the blending tank and may not contact the blending tank. The slurry blending tool may include a blending pump partially provided within the blending tank and to blend the one or more materials into the slurry. The slurry blending tool may include an outlet pipe connected to the blending pump and to remove the slurry from the blending tank.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Abstract: A substrate processing apparatus includes a substrate holding unit 31 configured to hold a substrate W; an outer nozzle 45 configured to discharge a processing liquid toward a surface of the substrate from a position at an outside of an outer edge of the substrate held by the substrate holding unit such that at least a central portion of the surface of the substrate is covered with a liquid film of the discharged processing liquid; and an actuator 46 (90) configured to change a height position or a discharge angle of the outer nozzle.

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

Abstract: A polishing apparatus capable of increasing an added value is disclosed. The polishing apparatus includes a polishing table configured to support a polishing pad, a top ring configured to press a substrate against the polishing pad, and a liquid supply mechanism configured to supply a liquid onto the polishing pad. The liquid supply mechanism includes a nozzle arm configured to be movable in a radial direction of the polishing table, and a liquid ejection nozzle attached to the nozzle arm. The liquid ejection nozzle is a fan-shaped nozzle having a liquid throttle surface having a tapered shape.

Abstract: In a method is provided for removing a material from a substrate, a plasma is generated at atmospheric pressure. The plasma includes an energetic species reactive with one or more components of the material. The plasma is flowed from an outlet as a plasma plume that includes periodic regions of high plasma density and low plasma density. The material is exposed to the plasma plume. At least one component of the material reacts with the energetic species, and at least one other component of the material is physically impacted and moved by one or more of the regions of high plasma density.

Abstract: The various described embodiments provide a CMP system and a method of using the same. The CMP system includes an imaging device, such as a laser scanner, that obtains an image of a dresser of the CMP system in real time or in-situ with a CMP process. A processing device of the CMP system compares the obtained image with one or more of reference images to determine whether or not the dresser has a defect. The processing device then adjusts the CMP process based on whether or not the dresser includes a defect.

Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.

Abstract: A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

Abstract: A polishing apparatus includes a holding table having a holding surface that holds a wafer, a polishing unit in which a polishing pad having an opening at the center of a polishing surface that polishes the wafer is mounted to a spindle and is rotated, a slurry supply unit that supplies slurry to the polishing surface of the polishing pad, and an air supply unit that shuts an upper end of a penetrating path penetrating through the axial center of rotation of the polishing pad and the spindle and supplies air into the penetrating path.

Abstract: Provided is a rotating shaft sealing device. The rotating shaft sealing device mounted in a semiconductor substrate processing apparatus that processes a semiconductor substrate while rotating a semiconductor loading unit accommodating the semiconductor substrate, includes: a housing that is hollow and mounted in the semiconductor substrate processing apparatus; a rotating shaft accommodated in the housing and connected to the semiconductor loading unit to transfer a rotational force to the semiconductor loading unit; a bearing rotatably supporting the rotating shaft in the housing; a sealing unit including a plurality of seals arranged in the housing to tightly seal a gap between the housing and the rotating shaft; and a power transfer unit mounted at an end of the rotating shaft to transfer a rotational force to the rotating shaft.

Abstract: A system includes a factory interface, an etching tool, and at least one measuring device. The factory interface is configured to carry a wafer. The etching tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the etching tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of reflectance from the wafer that is carried in the factory interface or the etching tool.