Abstract: A laser machining apparatus has a machining head connected to a laser oscillator having a plurality of current control units, a plurality of laser diode modules, a plurality of cavities, and a beam combiner, and performs machining by outputting light from the machining head under the control of the control unit. The laser machining apparatus includes: a current monitor unit which monitors each value of current controlled by the plurality of current control units; a power monitor unit which monitors each value of intensity of light outputted by the plurality of laser diode modules, each value of intensity of light outputted by the plurality of laser cavities, and value of intensity of light outputted by the beam combiner; and a judgment unit that judges a failure location based on values of current monitored by the current monitor unit, and values of intensity of light monitored by the power monitor.

Abstract: A folded slab waveguide laser having a hybrid waveguide-unstable resonator cavity. Multiple slab waveguides of thickness ‘t’ supporting vertical waveguide modes are physically arranged above one another in a stack and optically arranged in series through one or more cavity folding assemblies with curved mirrors. A gain medium such as a gas is arranged in each slab. Each cavity folding assembly is designed to redirect the radiation beam emitted from one slab waveguide into the next waveguide and also at the same time to provide a focus for the radiation beam so that a selected vertical waveguide mode (or modes) is (or are) coupled efficiently into the next slab.

Abstract: A semiconductor device has a semiconductor die. A first insulating layer is disposed over the semiconductor die. A first via is formed in the first insulating layer over a contact pad of the semiconductor die. A first conductive layer is disposed over the first insulating layer and in the first via. A second insulating layer is disposed over a portion of the first insulating layer and first conductive layer. An island of the second insulating layer is formed over the first conductive layer and within the first via. The first conductive layer adjacent to the island is devoid of the second insulating layer. A second conductive layer is disposed over the first conductive layer, second insulating layer, and island. The second conductive layer has a corrugated structure. A width of the island is greater than a width of the first via.

Abstract: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state pump permits Continuous Wave (CW) or pulsed energy application. Appropriate optical pumping admits catalyzer free near indefinite gas lifetime courtesy of the absence of significant discharge driven dissociation and contamination. As a direct consequence of the preceding arbitrary multi isotopologue CO2, symmetric and asymmetric, gas mixes may be utilized without significant degradation or departure from initial mix specifications. This would admit, at raised pressure, a system continuously tunable from approximately 9 ?m to approximately 11.5 ?m, or sub picosecond amplification.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: A polarisation and mode selection technique for a gas waveguide laser is described in which a surface of the waveguide is formed to be substantially dielectric with a localised metallic region therein. The metallic region provides linear polarisation while the dielectric surface provides for low order mode selection. Embodiments are described to channel and planar waveguides with various resonator configurations. Ranges are provided for the size and location of the metallic region on the waveguide surface.

Abstract: A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.

Abstract: A surface emitting laser includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields.

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: A laser generation importing device adapted to be applied to the human body includes a tunable laser device. The tunable laser device includes a semiconductor chilling plate which is capable of adjusting temperature, the semiconductor chilling plate is provided with a laser emission array, and the laser emission array includes multiple independent laser units which are capable of emitting different wavelengths.

Abstract: This invention provides an accurate current mirror circuit in a low voltage headroom applied to common-anode laser drivers, including a reference current detection unit, a tail current source unit, and a control unit. The reference current detection unit generates a bias voltage and a reference voltage according to a reference current from the reference current source; the tail current source unit receives the bias voltage and generate a mirror current accordingly; the control unit receives the reference voltage and an output voltage corresponding to the mirror current and carry out a feedback regulation to the bias voltage accordingly. In this invention, the reference voltage and the output voltage are locked at same level, and then the bias voltage is mirrored to generate the mirror current outputted to the laser, thus avoiding the problem of inaccurate current output caused by the offset of the control unit in the low voltage headroom.

Abstract: The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

Abstract: A directly modulated semiconductor laser whose optical output can be modulated by varying the transmittance of an end reflector of the laser cavity. In an example embodiment, the end reflector can be implemented using a lightwave circuit in which optical waveguides are arranged to form an optical interferometer. At least one of the optical waveguides may include a waveguide section configured to modulate the phase of an optical beam passing therethrough in response to an electrical radio-frequency drive signal in a manner that causes the transmittance and reflectance of the end reflector to be modulated accordingly. Advantageously, relatively high (e.g., >10 GHz) phase and/or amplitude modulation speeds of the optical output can be achieved in this manner to circumvent the inherent modulation-speed limitations of the laser's gain medium.

Abstract: A method of manufacturing a semiconductor laser device includes: forming an n-type nitride semiconductor layer; forming a first layer comprising InaGa1-aN (0<a<1) above the n-type nitride semiconductor layer; forming a second layer and a third layer above the first layer; forming an active layer having a single quantum well structure or a multiple quantum well structure above the second layer and the third layer; and forming a p-type nitride semiconductor layer above the active layer.

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.

Abstract: A gas supply system may include a first gas supply line, a second gas supply line, a circulation gas pipe, a gas purification unit, a first valve, and a second valve. The first gas supply line may include a first branching point at which the first gas supply line branches into a first branch connected to a first chamber and a second branch connected to a second chamber and the second gas supply line may include a second branching point at which the second gas supply line branches into a third branch connected to the first chamber and a fourth branch connected to the second chamber. A first portion of the first gas supply line upstream from the first branching point and a second portion of the second gas supply line upstream from the second branching point may be constituted by separate pipes from each other.

Abstract: Examples of an electronic package include a package assembly. The package assembly can include a substrate having a first substrate surface that includes a conductive layer attached to the first substrate surface. The package assembly includes a die communicatively coupled to the conductive layer and a contact block that includes a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween. The contact block can include a conductive material. The first contact surface can be coupled to the package assembly with a joint extended partially up the contact block wall. The electronic package can further include an overmold covering portions of the substrate, conductive layer, and die. The second contact surface of the contact block can be exposed through the overmold.