Abstract: A device comprising a low-power oscillator having an oscillator output, the oscillator when triggered produces X number of oscillator pulses in series at a high repetition rate from the oscillator output, where X is an integer. The device comprises a plurality of X series coupled amplifiers having a common optical path. The plurality of X amplifiers amplify a power parameter of the X number of oscillator pulses. A first amplifier of the plurality of X amplifiers is coupled to the oscillator output. The plurality of amplifiers are triggered in sequence in accordance with the high repetition rate of the oscillator so that an output from a last amplifier of the plurality of X amplifiers is a burst of X amplified pumping oscillator (APO) pulses with high-peak power and high-average power over the burst of APO pulses. A system and a method are also provided.

Abstract: A multi-beam laser cavity unit (10) comprises a laser crystal (13) and lens array (14) disposed in the laser cavity (LC). The lens array comprises an integral piece formed by a plurality of interconnected lenses. Each lens (14a) is configured to form a respective closed optical path (OPa) along the length (Z) of the laser cavity (LC) between the cavity mirrors (11,12) through the laser crystal (13) corresponding to a cavity mode for generating one (LBa) of the plurality of parallel laser beams (LB). The cavity unit (10) can be comprised in a laser system receiving pump light (PL) from a plurality of light sources. For example, the system can be used in a maskless patterning device.

Abstract: Embodiments include an optical configuration of a laser for driving an inertial confinement target that may include a section configured to generate long pulse laser light (Primary Laser Source) and then to compress the long pulse with multiple compression stages to a desired pulse length, energy, and beam quality (Compression Section). These configurations can utilize compression stages that do not include any material optics operating near damage fluence, and that do not require material optics exposed to high fluences to couple compression stages to each other.

Abstract: A fiber laser system comprises a main body, wherein the main body includes one or more fiber laser system components and a first wall hingedly attached to the main body along a first edge, the first wall having a first wall open position and a first wall closed position and a plurality of feed fiber management and splicing components mounted to the first wall. Additionally and/or alternatively, the laser system may comprise a cooling plate hingedly attached to the main body, the cooling plate has a cooling plate open position and a cooling plate closed position. Additionally and/or alternatively, the laser system may include a fiber management tray hingedly mounted to the cooling plate, the fiber management tray having a fiber management tray open position and a fiber management tray closed position.

Abstract: A semiconductor device includes an insulating substrate having a metal plate, an insulating resin plate, and a circuit plate laminated in order; a semiconductor element fixed to the circuit plate; a wiring member connected to an electrode disposed on a front surface of the semiconductor element or to the circuit plate of the insulating substrate; a housing accommodating the insulating substrate, the semiconductor element, and the wiring member; and a sealing material including a thermosetting resin, and sealing the insulating substrate, the semiconductor element, and the wiring member accommodated in the housing. The circuit plate of the insulating substrate is selectively formed on the insulating resin plate as a combination of a circuit pattern with a sealing material adhering pattern.

Abstract: A microwave excited gas slab laser comprising a waveguide wherein the electrodes are covered with multi-layered stripes either forming a photonic band-gap or having a refractive index lower than 1.

Abstract: To provide a laser oscillator allowing the use of a plastic lens in a semiconductor laser module for a high-output laser oscillator while being unlikely to reduce the efficiency of coupling to an optical fiber even if a laser output changes. A laser oscillator comprises a semiconductor laser module with multiple semiconductor laser elements. The laser oscillator comprises: multiple lenses in a first group provided in the semiconductor laser module for causing laser beams from the semiconductor laser elements to pass through; and a lens in a second group provided in the semiconductor laser module for causing all beams having passed through the multiple lenses in the first group to pass through. The lenses in the first group are plastic lenses. The lens in the second group is a glass lens.

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Abstract: The monolithic integration of optically-pumped and electrically-injected III-nitride light-emitting devices. This structure does not involve the growth of p-type layers after an active region for a first III-nitride light-emitting device, and thus avoids high temperature growth steps after the fabrication of the active region for the first III-nitride light emitting device. Since electrical injection in such a structure cannot be possible, a second III-nitride light-emitting device is used to optically pump the first III-nitride light emitting device. This second III-nitride light emitting device emits light at a shorter wavelength region of the optical spectrum than the first III-nitride light emitting device, so that it can be absorbed by the active region of the first III-nitride light-emitting device, which in turn emits light at a longer wavelength region of the optical spectrum than the second III-nitride light emitting device.

Abstract: A densely-spaced single-emitter laser diode configuration is created by using a laser bar (or similar array configuration) attached to a submount component of a size sufficient to adequately support the enter laser structure. The surface of the submount component upon which the laser structure is attached is metallized and used to form the individual electrical contacts to the laser diodes within the integrated laser structure. Once attached to each other, the laser structure is singulated by creating vertical separations between adjacent light emission areas. The submount metallization is similarly segmented, creating separate electrodes that are used to individually energize their associated laser diodes.

Abstract: The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle.

Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

Abstract: A VCSEL array having a plurality of VCSELs, each having more than two modes, and the optical emission from each of the VCSELs overlaps in a far field of the VCSELs. A VCSEL array having a plurality of VCSELs, each having an aperture size of at least about 6 ?m, and the optical emission from each of the VCSELs overlaps in a far field of the VCSELs. A VCSEL array having a plurality of VCSELs, wherein the spectral width of each VCSEL is at least about 0.5 nm, and the optical emission from each of the VCSELs overlaps in a far field of the VCSELs.

Abstract: An optical module includes a transparent substrate and a refractive optical element mounted on the substrate. A conductive heating trace is deposited on the substrate around the refractive optical element. A temperature sensor senses a temperature of the substrate. Control circuitry is coupled to the temperature sensor so as to measure a difference between the temperature of the substrate and a target operating temperature of the module, and to drive a current through the conductive heating trace, responsively to the difference, so as to heat the substrate to the target operating temperature.

Abstract: A light emitting element according to the present disclosure includes: a GaN substrate; a first strain correction layer disposed above the GaN substrate and including InxGa1-xN of a first conductivity type where x is greater than 0 and less than or equal to 1; a first low refractive index layer disposed above the first strain correction layer, including In1-a-bGaaAlbN of the first conductivity type, and having relationships of (a/0.98)+(b/0.8)?1, (a/1.02)+(b/0.85)?1, and (a/1.03)+(b/0.68)?1; a first clad layer disposed above the first low refractive index layer, including AlzGa1-zN of the first conductivity type where z is greater than or equal to 0.03 and less than or equal to 0.06, and having a refractive index higher than a refractive index of the first low refractive index layer; and an active layer disposed above the first clad layer.

Abstract: A semiconductor device (100) includes a thin film transistor (5) provided on a substrate and including a gate electrode (12), a gate insulating layer (20) in contact with the gate electrode, an oxide semiconductor layer (18) located so as to partially overlap the gate electrode with the gate insulating layer being located between the oxide semiconductor layer and the gate electrode, a source electrode (14), and a drain electrode (16). The oxide semiconductor layer (18) includes a gate facing region (18g) overlapping the gate electrode as seen in a direction of normal to the substrate; and offset regions (18os, 18od) provided adjacent to the gate facing region, the offset regions not overlapping the gate electrode, the source electrode or the drain electrode as seen in the direction of normal to the substrate. The gate facing region has a carrier concentration in the range of 1×1017/cm3 or greater and 1×1019/cm3 or less.

Abstract: A method of spectrally multiplexing diode pump modules to increase brightness includes generating one or more pump beams from respective diode lasers at a first wavelength in a diode laser package, generating one or more pump beams from respective diode lasers at a second wavelength different from the first wavelength in the diode laser package, wavelength combining at least one of the pump beams at the first wavelength with at least one of the pump beams at the second wavelength to form one or more combined pump beams, and receiving the combined pump beams in a pump fiber coupled to the diode laser package. Laser systems can include multi-wavelength pump modules and a gain fiber having a core actively doped so as to have an absorption spectrum corresponding to the multiple wavelength, the gain fiber situated to receive the pump light and to produce an output beam at an output wavelength.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Structures, devices and methods are provided for fabricating memory devices. A structure includes: a first conductive line disposed in a first conductive layer; a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer; and a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer. The second conductive layer and the third conductive layer are different from the first conductive layer.

Abstract: An aquarium having an adjustable lighting system for enhancing the display of fluorescent objects, such as fluorescent fish, contained within the aquarium under various external lighting conditions, such as a dark room or a brightly lit room. The aquarium comprises a tank and a plurality of light sources. Each light source emits light at a different wavelength spectrum which is selected to enhance the display of the fluorescent object under each type of external lighting condition. An electronic control is provided to control the operation of the plurality of light sources such that each light source may be selectively turned on/off based on the external lighting condition, or chronological criteria, to provide the best viewing experience.