Abstract: The present invention relates to a memory on a silicon microchip, having a serial input/output, an integrated memory array addressable under N bits, and at least one register that is read accessible, after applying a command for reading the register to the memory. The memory stores a most significant address allocated to the memory within an extended memory array wherein the memory is incorporated or intended to be incorporated. A master memory signal is generated based on the most significant address allocated to the memory. A central processing unit executes a command for reading the register and supplies the content of the register to the serial input/output of the memory only if the memory is the master memory within the extended memory array. The memory includes slave memories whose operation depends upon the read/write status of the master memory.

Abstract: A semiconductor device includes a controller which operates if a request is made that data be written in a certain area in a first block in a semiconductor memory having a predetermined erase block size in which data has already been written, to write the data requested to be written, in a leading area in a second block from which data has already been erased, regardless of a value of an address of the certain area.

Abstract: We present, in an exemplary embodiment of the present invention, a novel method for providing cache refresh within a finite time window (i.e., a time-box) with predictable accuracy and given constrained resources. Instead of refreshing the entire cache in a specified time window, we introduce an error. As used herein, the term “error” refers to a period of time. By introducing error, we effectively and dynamically widen the time-box to distribute the refresh activity.

Abstract: The invention refers to a Memory Rank Decoder for a Multi-Rank Dual Inline Memory Module (DIMM) having a predetermined number of DRAM memory chips mounted on a printer circuit board (PCB), wherein each DRAM memory chip comprises a predetermined number of stacked DRAM memory dies which are selectable by a memory rank selection signal (r), wherein the memory rank decoder generates the memory rank selection signal (r) in response to external selection signals applied to the dual inline module (DIMM).

Abstract: Providing electrical isolation between the chipset and the memory data is disclosed. The disclosure includes providing at least one buffer in a memory interface between a chipset and memory modules. Each memory module includes a plurality of memory ranks. The buffers allow the memory interface to be split into first and second sub-interfaces. The first sub-interface is between the chipset and the buffers. The second sub-interface is between the buffers and the memory modules. The method also includes interleaving output of the buffers, and configuring the buffers to properly latch the data being transferred between the chipset and the memory modules. The first and second sub-interfaces operate independently but in synchronization with each other.

Abstract: Methods, software and systems of dynamically controlling push cache operations are presented. One method, which may also be implemented in software and/or hardware, monitors performance parameters and enables or disables push cache operations depending on whether the performance parameters are within a predetermined range. Another method, which may also be implemented in software and/or hardware, monitors an amount of credits associated with a device and enables or disables push cache operations dependent upon whether the device has sufficient remaining credits.

Abstract: A method for detecting an invalid pointer including a source component and a target component, involving selecting a virtual source memory address for the source component wherein the virtual source memory address is within a first valid virtual address range, selecting a virtual target memory address for the target component wherein the virtual target memory address is within a second valid virtual address range, numerically combining the virtual source memory address and the virtual target memory address to obtain a new virtual source memory address, and writing the virtual target memory address into a memory location referenced by the new virtual source memory address, wherein writing the virtual target memory address triggers an action by a memory management unit (MMU) if the new virtual source memory address is an invalid memory location.