Abstract: The polishing uniformity of a material on a substrate is improved by using a polishing method where an applied pressure on the backside of the substrate is changed during the polishing process. The method is especially useful for polishing thin material layers requiring precise control of polishing across the substrate, e.g., for TaSiN layers used in the formation of gate stacks and stacked capacitors.

Abstract: Inside a groove are sequentially formed a barrier-metal film 3, a seed-metal film 4 and the first plating film 6. The thickness of the first plating film 6 is about 0.1 to 0.5 the width of the groove 5. After conducting the first annealing for about 5 hours at an ambient temperature or for about 30 min at 300° C. or higher, the second plating film 7 is formed, which is then subject to the second annealing for about 25 hours at an ambient temperature or for about 30 min at 300° C. or higher. Then, the surface of the substrate is smoothed by CMP to provide a semiconductor device.