Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: A tank-type water electrolysis apparatus with unipolar electrodes arrangement and wherein imposed magnetic fields enhance electrolyte solution circulation, further enhanced in apparatus operation by use of immersed electrets providing partitioning structure between seperated hydrogen bubbles-producing and oxygen bubbles-producing regions in the solution. The included immersed electrets, which may be of polytetrafluoroethylene or other suitable material, perform the functions of attracting bubbles away from points of origination at the electrodes, and of promoting coelescence of smaller bubbles into larger ones of greater buoyancy.

Abstract: A dispersion composition comprising 100 parts by weight of a specific perfluorocarbon-based copolymer containing functional groups and 10 to 10,000 parts by weight of a specific liquid fluoro-oligomer(s). The composition of the present invention is useful as a material for producing, for example, a fluorine-containing cation-exchange membrane having excellent functions imparted thereto.

Abstract: This invention is applied to any ionized solution of dissolved solids and electrolytes, such as sea water, which is forced through a conduit equipped with a magnetic wall of rectangular cross-section, which induces a magnetic field, where ions separate when passing through according to magneto-hydrodynamic physics. The conduit is made up of one continuous magnetic wall, a spiral or similar, with opposite magnetic poles on each side, where these both sides co-operate to extend magnetic fields with parallell wall in the same direction through the whole conduit. The ionized solution is pumped into the center of the spiral and further out through the spiral or similar. The charged ions in the flow stream are deflected laterally towards the open ends and as separated positive or negative ions into chambers outside the conduit.

Abstract: A multi-process workpiece apparatus is disclosed. The multi-process workpiece apparatus includes an electrochemical deposition apparatus which has a wafer contacting surface having at least one electrical conductor disposed therein. The multi-process workpiece apparatus also includes a planarization apparatus and at least one workpiece handling robot configured to transport a workpiece from the electrochemical deposition apparatus to the planarization apparatus.

Abstract: An electroplating apparatus is provided with a metal target and a device for supporting a semiconductor wafer (or other workpiece) in an electroplating solution. The target (anode) may be located relatively far from the wafer surface (cathode) at the beginning of the plating process, until a sufficient amount of metal is plated. When an initial amount of metal is built up on the wafer surface, the target may be moved closer to the wafer for faster processing. The movement of the target may be controlled automatically according to one or more process parameters.

Abstract: The present invention provides a solder plating system with automatic monitoring of wash fluid pressure. The system automatically activates an alarm and/or initiates shutdown of a solder plating machine when the pressure reading indicates a failure of the wash fluid supply. The system thereby reduces the number of parts that are affected by failures in the wash fluid supply system. In some cases, problems with the wash fluid supply are detected before any parts are affected.

Abstract: The invention relates to an aqueous solution comprising the following components: Zn(II) ions, Sn(II) ions, aliphatic carboxylic acids and/or their alkaline salts, anionic surfactants, non-ionogenic surfactants and optionally aromatic aldehydes, aromatic ketones, aromatic carboxylic acids and heterocyclic carboxylic acids or their alkaline salts or conducting salts. The inventive solution provides a means for electrodepositing uniform light-colored tin-zinc alloys without having to use cyanide ions, allowing low energy consumption and few requirements in terms of the control of the bath.

Abstract: A semiconductor workpiece holder for use in processing a semiconductor workpiece includes a workpiece support operatively mounted to support a workpiece in position for processing. A finger assembly is operatively mounted upon the workpiece support and includes a finger tip. The finger assembly is movable between an engaged position in which the finger tip is engaged against the workpiece, and a disengaged position in which the finger tip is moved away from the workpiece. Preferably, at least one electrode forms part of the finger assembly and includes an electrode contact for contacting a surface of said workpiece. At least one protective sheath covers at least some of the electrode contact. According to one aspect of the invention, a sheathed electrode having a sheathed electrode tip is positioned against a semiconductor workpiece surface in a manner engaging the workpiece surface with said sheathed electrode tip.

Abstract: An apparatus for plating a conductive film directly on a substrate with a barrier layer on top includes anode rod (1) placed in tube (109), and anode rings (2), and (3) placed between cylindrical walls (107) and (105), (103) and (101), respectively. Anodes (1), (2), and (3) are powered by power supplies (13), (12), and (11), respectively. Electrolyte (34) is pumped by pump (33) to pass through filter (32) and reach inlets of liquid mass flow controllers (LMFCs) (21), (22), and (23). Then LMFCs (21), (22) and (23) deliver electrolyte at a set flow rate to sub-plating baths containing anodes (3), (2) and (1), respectively. After flowing through the gap between wafer (31) and the top of the cylindrical walls (101), (103), (105), (107) and (109), electrolyte flows back to tank (36) through spaces between cylindrical walls (100) and (101), (103) and (105), and (107) and (109), respectively.

Abstract: A method for back-etching of tungsten-coated substrate surfaces in the production of large-scale integrated circuits includes pressing a substrate against a cooled specimen holder during back-etching with a retaining ring being disposed on an edge of the substrate and only locally retaining the edge of the substrate with the retaining ring at retaining locations distributed over the circumference of the retaining ring. The retaining locations are backup-free relative to etching products liberated in the back-etching, causing the etching products to flow past the retaining locations and be purposefully deposited outside the substrate surface.

Abstract: A method and apparatus is disclosed for reclaiming a metal from the effluent of a chemical mechanical planarization (CMP) process and using the reclaimed metal in an electroplating process. The steps of the method include using a chemical solution in a CMP process to remove material from a semiconductor device. An effluent is produced by this step that contains a dissolved first species removed from the semiconductor device. Then a second step of treating the effluent is performed to remove the dissolved first species and to produce a reclaimed metal. Then a third step of using the metal in an electroplating process is performed.

Abstract: The invention relates to a system for treating a surface of an article with a liquid material by dipping. This system includes (a) a major tank having therein the liquid material for dipping the article thereinto; and (b) a circulatory mechanism for circulating the liquid material through the major tank. The circulatory mechanism is arranged to make a flow of the liquid material through the major tank such that the majority of the flow is in one direction that is substantially along the longitudinal direction of the major tank. Thus, contaminants and/or bubbles are not distributed over the entire major tank, but are effectively promptly removed from the major tank. The flow of the liquid material may include a first flow of the liquid material in the major tank and a second flow that is lower than the first flow in position. The first and second flows run substantially in parallel with each other, before the first and second flows reach a downstream end thereof in the major tank.

Abstract: A fuel cell (30) has an internal fuel source (35) that is in a matrix around a membrane electrode assembly (29). The membrane electrode assembly is constructed to be generally formed in the shape of a solid cylinder. The fuel cell has a porous central core (22) of reticulated vitreous metal that is formed in the shape of a solid cylinder. The porous central core serves to distribute oxidant throughout the fuel cell. A cathode (23) is situated coaxially around the porous central core, and has a catalytic layer on the outer side. A solid polymer electrolyte (25) is situated coaxially around the cathode and in intimate contact with the catalytic layer. An anode (27) is situated coaxially around the electrolyte, and a second layer of catalytic material is situated between the electrolyte and the anode. A housing (31) contains the internal fuel supply and holds the membrane electrode assemblies in place.

Abstract: A method and system for identifying and providing absolute identification on any visual medium or devices, to permit accurate recall of unique characteristics of the device being identifying. The recorded production information become the characteristics of the device, enabling fast and accurate identification and retrieval at a later date. The recording apparatus basically comprises a keyboard for inputting identification information for each device of a production lot, an electronic encoder for encoding the identification information into an index code, a laser device for etching or engraving the index code to a surface of each device, an inking device for filling the etched surface of each device with ultraviolet or infrared ink, and a spraying device for spraying a protective coat over the etched surface of each device. The index code can be retrieved at a later time for identifying each device from the production lot and the index code will remain invisible and not be seen by the naked eye.

Abstract: Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. To effectuate such individual wafer processing on a continuous basis and preserve the evacuated argon environment, a vacuum chamber sputter coating apparatus is provided which has a number of work stations therein, at least one of which includes said ring-shaped sputtering source. Also included is a load lock, and an intermittently rotting vertical plate-like wafer carrier means therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clip means, without the use of any externally-originating supports such as platens.

Abstract: A process for the production of a composition modulated alloy having a predetermined concentration is disclosed, in which alternating layers of at least two metals are successively deposited upon a substrate by electrodeposition, vacuum deposition, vapor deposition, or sputtering. The individual thicknesses of at least one metal's layers are varied in a predetermined manner. Pulsed galvanostatic electrodeposition using a tailored waveform is preferred. A copper-nickel concentration graded alloy is disclosed. Concentration graded alloys of predetermined concentration having at least one region of local homogeneity are also disclosed. The region of local homogeneity has a thickness corresponding to the thickness of two adjacent layers of different metals which have been diffusion annealed together. A pulsed electrodeposition/diffusion anneal process for production of such alloys is also disclosed.

Abstract: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.

Abstract: In a method and apparatus for plasma stripping a polymer photoresist coating from a semiconductor substrate, positively charged species are removed from an activated gas flow before the gas flow is brought into contact with the coating to strip the coating from the substrate. The positively charged species may be removed by bringing the activated gas into contact with a grounded conducting surface to discharge the positively charged species, or by passing the activated gas through a negatively charged electrostatic filter to filter out positively charged species. The removal of positively charged species from the gas flow reduces or eliminates build up of positive charge on an outer surface of the photoresist coating so as to avoid driving mobile positively charged ions from the photoresist into the substrate, thereby avoiding contamination of the substrate.