Abstract: A semiconductor device, comprises a first MOS transistor including a gate electrode having a gate width Le and a first gate post oxide film formed on the circumferential side wall of the gate electrode, and a second MOS transistor including a gate electrode having a gate width Li smaller than the gate width Le of the gate electrode of the first MOS transistor and a second gate post oxide film formed on a circumferential side wall of the gate electrode and having a portion differing in thickness from the first gate post oxide film.

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film.