Abstract: A process for fabricating a semiconductor-metal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is deposited on the substrate preferably by molecular beam epitaxy forming a control region. A layer of a semiconductor material epitaxially matched to the substrate is then grown on the layer of conductive material so that the layer of semiconductor material forms a second active region of an electronic device.
Type:
Grant
Filed:
November 13, 1985
Date of Patent:
July 19, 1988
Assignee:
Bell Communications Research, Inc.
Inventors:
Gustav E. Derkits, Jr., James P. Harbison