Abstract: A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

Abstract: A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long wavelength edge of a reflection peak of the etalon.

Abstract: A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode has an anode connected to the second terminal of the inductor and to the drain node of the bypass switch. A laser diode switch has a drain node connected to a cathode of the laser diode. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.

Abstract: In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.

Abstract: The present disclosure provides a waveguide integrated optical modulator, which is made of a bismuth film, an antimony film, or a tellurium film. A thickness of the bismuth film, the antimony film, or the tellurium film is between 10 nm and 200 nm, and the bismuth film, the antimony film, or the tellurium film is produced by physical vapor deposition method. The waveguide integrated optical modulator can directly add the symmetrical electrode on the surface of the bismuth film, the antimony film, or the tellurium film, and apply an external bias voltage of different amplitudes to the bismuth film, the antimony film, or the tellurium film by adjusting the power source. Thus, the waveguide integrated optical modulator can actively control the nonlinear optical characteristics of the saturable absorber by changing the magnitude of the external voltage, and further actively modulate the laser characteristics of the pulse.

Abstract: A two-kappa DBR laser includes an active section, a HR mirror, a first DBR section, and a second DBR section. The HR mirror is coupled to a rear of the active section. The first DBR section is coupled to a front of the active section, the first DBR section having a first DBR grating with a first kappa ?1. The second DBR section is coupled to a front of the first DBR section such that the first DBR section is positioned between the active section and the second DBR section. The second DBR section has a second DBR grating with a second kappa ?2 less than the first kappa ?1. The two-kappa DBR laser is configured to operate in a lasing mode and has a DBR reflection profile that includes a DBR reflection peak. The lasing mode is aligned to a long wavelength edge of the DBR reflection peak.

Abstract: A laser system according to the present disclosure includes: a laser apparatus configured to emit a laser beam; a transmission optical system disposed on a path between the laser apparatus and a target supplied into an EUV chamber in which EUV light is generated; a reflection optical system configured to reflect, toward the target, the laser beam from the transmission optical system; a first sensor configured to detect the laser beam traveling from the laser apparatus toward the reflection optical system; a second sensor configured to detect return light of the laser beam reflected by the reflection optical system and traveling backward to the laser apparatus; and a control unit configured to determine that the reflection optical system is damaged when no anomaly of the laser beam is detected and a light amount of the return light exceeds a predetermined light amount value.

Abstract: An optical module includes a light-forming part configured to form light; and a protective member that includes an output window configured to transmit light from the light-forming part and that is disposed so as to surround the light-forming part. The light-forming part includes a base member; a plurality of semiconductor light-emitting devices mounted on the base member and configured to emit light differing from each other in wavelength; and a filter mounted on the base member and configured to directly receive and coaxially multiplex diverging light from the plurality of semiconductor light-emitting devices.

Abstract: The disclosure concerns a housing for a light source mounted on a substrate, the housing comprising: a barrel comprising a mounting for a diffuser; and a diffuser positioned in the mounting, wherein the barrel comprises first and second conducting columns and a fuse or conductive wire electrically coupling the first and second conducting columns. A portion of the fuse is mechanically fixed to the diffuser and/or the fuse being arranged to trap the diffuser in said mounting.

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

Abstract: A driver circuit for a laser diode is configured to pass a current. The circuit includes a charge-pump configured to generate an output boosted positive supply rail voltage. At least one switch is configured to couple the output of the charge-pump to a terminal of the laser diode and to isolate the positive supply rail from the terminal of the laser diode when the charge-pump is enabled.

Abstract: Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of exciton density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

Abstract: A pyrolytic graphite (PG) substrate and laser diode package includes a substrate body having a PG crystalline structure with a basal plane oriented at a pre-determined orientation angle as measured from a longitudinal axis of a heat generating material, such as a laser diode, mounted on a surface of the PG substrate, so that a coefficient of thermal expansion (CTE) of the PG substrate is substantially matched with a CTE of the material.

Abstract: A narrow-linewidth tunable external cavity laser includes, sequentially arranged along an optical path, a laser gain chip, a collimating lens, a bandpass filter, a tunable filter, and an output cavity surface. The laser gain chip includes a first end surface and a second end surface positioned along the optical path. The first end surface is further away from the collimating lens and is coated with a highly reflective film to form an external cavity with the output cavity surface.

Abstract: A laser arrangement includes a laser array including a multitude of lasers and an optical device configured to provide a defined illumination pattern in a defined field-of-view. The optical device includes a multitude of localized optical structures, each respective localized optical structure being associated with at least one respective laser of the laser array and being arranged to redirect laser light emitted by the at least one respective laser such that laser light emitted by the at least one respective laser appears to be emitted from at least one apparent position of the laser array. The localized optical structures are arranged such that laser light emitted by at least one respective selected laser appears to be emitted from at least two apparent positions of the laser array. The optical device is arranged such that the apparent positions are distributed in an irregular pattern.

Abstract: A set of optical elements for optical extraction composed of packed expanding optical cross sections to efficiently extract from a large gain region. The elements are rectangular shaped concave small expansion lenses matched to rectangular convex collimating lenses. Absorbing sheets divide an overall large volume up into smaller volumes to minimize losses due to amplified spontaneous emission. This arrangement has various applications, particularly in inertial confinement technology, where it may be used to extract energy from KrF laser media energized by electron beams. For certain applications, this regime of the gain medium may have zones at the absorbing sheets where this is no gain.

Abstract: A swept light source of the present invention keeps a coherence length of an output beam long over an entire sweep wavelength range. A gain of a gain medium is changed with time in response to a wavelength sweep and the coherence length is kept maximum. The gain of the gain medium is kept close to a lasing threshold and an unsaturated gain range of the gain medium is narrowed over the entire sweep wavelength range. An SOA current waveform data acquiring method of driving while keeping the coherence length long, a novel coherence length measuring method, and an optical deflector suitable for the swept light source are also disclosed.

Abstract: Provided is an optical device including a radio frequency (RF) signal source configured to electrically provide an RF signal, a first diode configured to operate as a laser diode (LD) or an electro-absorption modulator (EAM) in response to the RF signal, a second diode configured to share an N region of the first diode, be serially connected to the first diode, and have a P region connected to a ground to operate as a capacitor for series push-pull operation with the first diode, and a resistor connected between the N region and the ground.

Abstract: The present disclosure relates to optical fiber amplifying systems having operability at a wide variety of ambient temperatures and to methods for using them. One aspect of the disclosure is an optical fiber system configured to provide amplified radiation. The system includes an active optical fiber; a plurality of grating-locked pump sources, each having an output optically coupled to the active optical fiber; one or more temperature sensors, configured to measure a temperature associated with one or more of the grating-locked pump sources; and a control system configured to accept measurements from the one or more temperature sensors and, for a desired total pump power output, to provide to one or more of the grating-locked pump sources a set of drive currents suitable to provide the desired total pump power output.

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.