Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

Abstract: This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.

Abstract: New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R?6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.

Abstract: A method of multiphoton photosensitizing comprises (a) providing a multiphoton-activatable, photoreactive composition comprising (1) at least one reactive species that is capable of undergoing an acid- or radical-initiated chemical reaction, and (2) a photoinitiator system comprising photochemically-effective amounts of (i) at least one type of semiconductor nanoparticle that has at least one electronic excited state that is accessible by absorption of two or more photons, and (ii) a composition that is capable of interacting with the excited state of the semiconductor nanoparticle to form at least one reaction-initiating species; and (b) irradiating the multiphoton-activatable, photoreactive composition with light sufficient to cause absorption of at least two photons, thereby inducing at least one acid- or radical-initiated chemical reaction where the composition is exposed to the light.

Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: The invention relates to methods of writing a light-guiding structure in a bulk glass substrate. The bulk glass substrate is preferably made from a soft silica-based material having an annealing point less than about 1380° K. A pulsed laser beam is focused within the substrate while the focus is translated relative to the substrate along a scan path at a scan speed effective to induce an increase in the refractive index of the material along the scan path. Substantially no laser-induced physical damage of the material is incurred along the scan path. Various optical devices can be made using this method.

Abstract: The present invention relates to a paste composition, including a bonding agent charged with a metallic powder, to be used in a prototyping procedure, a procedure for obtaining metallic products from said composition, and a metallic product obtained from said procedure. The composition is characterized by the fact that it includes: a bonding agent comprised of at least one photopolymerizable resin, with a viscosity of less than 4000 mPa.s, measured at 25° C., a photoinitiator, in a concentration greater than 0.2% by mass with respect to the mass of the resin, and a metallic powder in a volumetric concentration greater than 40% with respect to the composition, with said composition having a minimum reactivity on the order of 5 mm3/s per watt of lighting power.

Abstract: Disclosed is a polymer compound for photoresist characterized in that the polymer compound is formed of a polymer compound having at least one skeleton represented by the following general formula (1), general formula (2A), general formula (2B) or general formula (2C):

Abstract: A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1?-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: —C(Rf)(Rf?)Orb wherein Rf and Rf? are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is an integer ranging from 2 to about 10 and Rb is a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm?1 at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.

Abstract: A positive resist composition comprising (A) a resin having a specific structure and capable of decomposing under action of an acid to increase solubility in an alkali developer, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Abstract: A radiation-sensitive resin composition comprising an acid-labile group-containing resin and a photoacid generator is disclosed. The resin has a structure of the formula (1), wherein R1 represents a hydrogen atom, a monovalent acid-labile group, an alkyl group having 1-6 carbon atoms which does not have an acid-labile group, or an alkylcarbonyl group having 2-7 carbon atoms which does not have an acid-labile group, X1 represents a linear or branched fluorinated alkyl group having 1-4 carbon atoms, and R2 represents a hydrogen atom, a linear or branched alkyl group having 1-10 carbon atoms, or a linear or branched fluorinated alkyl group having 1-10 carbon atoms. The resin composition exhibits high transmittance of radiation, high sensitivity, resolution, and pattern shape, and is useful as a chemically amplified resist in producing semiconductors at a high yield.

Abstract: A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula: wherein R1 is a hydrogen atom or methyl, R2 is an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.

Abstract: A positive photoresist composition comprises: an acid-decomposable resin containing a specified repeating unit; an acid-generator; and a specified dissolution-inhibiting compound.

Abstract: Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: Provided are a variety of monomers suitable of producing photosensitive polymers, that are in turn, useful in photoresist compositions, through radical (cationic) polymerization including at least one multi-ring alkenyl ethers and one ?-fluorinated acrylate. The resulting photoresist compositions exhibit both acceptable resistance to dry etching processing and light transmittance suitable for use with various light sources such as KrF excimer lasers, ArF excimer lasers or F2 excimer lasers, in a photolithography process to produce fine photoresist patterns. In addition to the multi-ring alkenyl ethers and ?-fluorinated acrylates, additional monomers comprising one or more cyclic aliphatic and heterocyclic compounds, both unsubstituted and substituted, in particular dihydropyrans, may be incorporated into the photosensitive polymers.

Abstract: A chemical amplifying type positive resist composition having excellent sensitivity and resolution, manifesting no generation of scum is provided, which comprises a resin which has a polymerization unit derived from hydroxystyrene and a polymerization unit derived from 2-ethyl-2-adamantyl (meth)acrylate, and is insoluble or poorly soluble itself in an alkali, but becomes alkali-soluble after dissociation of the above-mentioned acid unstable group by the action of an acid; a radiation sensitive acid generating agent; and polypropylene glycol.

Abstract: The present invention provides a sulfonate of the formula (I): wherein Q1, Q2, Q3, Q4 and Q5 each independently represent hydrogen, alkyl having 1 to 16 carbon atoms, alkoxy having 1 to 16 carbon atoms, halogen, aryl having 6 to 12 carbon atoms, aralkyl having 7 to 12 carbon atoms, cyano, sulfide, hydroxy, nitro or a group of the formula (I?) —COO—X—Cy1??(I?) wherein X represents alkylene and at least one —CH2— in the alkylene may be substituted by —O— or —S—, and Cy1 represents alicyclic hydrocarbon having 3 to 20 carbon atoms, and A+ represents a counter ion, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 is the group of the formula (I?).

Abstract: Resist compositions comprising as the base resin a polymer using tert-amyloxystyrene as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in the baking temperature range of 100-110° C. which is unachievable with tert-butoxystyrene. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

Abstract: The present invention relates to fluorinated polyethers having a fluorinated aliphatic group at a main chain as represented by the formula (1), as well as a waveguide fabricated using the same: where RF represents OCH2(CF2)nCH2O, or OCH2CF2O(CF2CF2O)nCF2CH2O, where n is a natural number ranging from 1 to 12; Ar1 represents ?where B is not present or a C?O group, or Ar1 represents ?where Hal is one selected from F, Cl, Br and I; Ar2 represents ?where D is one selected from —C(CF3)2, —C(CH3)2, —CO—, —SO2—, —O— and —S—, or Ar2 represents ?where R1 and R2 are the same or different and each independently represents a halogen atom selected from F, Cl, Br and I, and m is a natural number of 1-3, or Ar2 represents E represents H, or ?where P is H or a substituted or unsubstituted phenyl group; x is a number ranging from 0.1 to 1.0; y is 1.0?x.

Abstract: The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy.