Abstract: A memory structure including a magnetic tunnel junction (MTJ) structure and a top electrode that are both formed without utilizing ion beam etching is provided. The MTJ structure, which includes a lower magnetic stack, a tunnel barrier layer and an upper magnetic stack, is pyramidal shaped, and end portions of the lower magnetic stack of the MTJ structure are devoid of the tunnel barrier layer and the upper magnetic stack.

Abstract: A light-emitting device includes a semiconductor laminate, a first electrode and a second electrode. The semiconductor laminate has a mesa surface, an upper surface, a connecting surface that connects the upper surface and the mesa surface, and a lower surface opposite to the mesa surface and the upper surface. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed in such order in a direction from the lower surface to the upper surface. The semiconductor laminate has at least one trench that extends from the mesa surface into the first semiconductor layer. The first electrode is electrically connected to the first semiconductor layer and formed on the mesa surface, and has an extending portion that extends into the trench. The second electrode is electrically connected to the second semiconductor layer and formed on the upper surface.

Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.

Abstract: A method for inputting an image display information is provided, and the method comprises: taking a measurement result image of a measuring device to obtain an output image by a camera of a terminal device; transmitting the output image to a cloud server via a communication interface of the terminal device; and recognizing the output image to obtain a recognized matching result related to a recognized measurement value and a recognized measurement unit; and saving the recognized matching result via the cloud server.

Abstract: A touch module includes a flexible base, a moisture blocking film and a touch structure. The moisture blocking film has a first surface and a second surface opposite to the first surface, and the first surface directly contacts the flexible base. The touch structure is disposed on the second surface of the moisture blocking film and includes a first conductive layer disposed on the second surface, a first insulating layer disposed on the first conductive layer, a second conductive layer disposed on the first insulating layer and a second insulating layer disposed on the second conductive layer. An area of the moisture blocking film is greater than or equal to the sum of the areas of the touch electrode region and the peripheral circuit region of the touch structure. The water vapor transmission rate of the moisture blocking film is less than 5.0*10?4 g/(m2*day).

Abstract: An antenna element comprises one or more directors, a resonator, and a three dimensional ground assembly. Parts of the antenna element are arranged on three metal layers. A top layer has an unconnected metal bar which forms a beam director, a resonator and a top part of the ground assembly. The resonator is an integral piece substantially in the form of a loop connected to a feed line and a feed line terminal ending. The feed line terminal ending serves as the ground plane for the feed line as well as providing impedance matching from the external transceiver circuit to the resonator. The ground assembly includes a top layer ground connected to a plurality of metallized half cylindrical hole channels (or metallized via holes) which connect to a ground terminal in a bottom layer.

Abstract: An optical system and a method of manufacturing an optical system are provided. The optical system includes a carrier, a light emitter, a light receiver, a block structure and an encapsulant. The light emitter is disposed on the carrier. The light receiver is disposed on the carrier and physically spaced apart from the light emitter. The light receiver has a light detecting area. The block structure is disposed on the carrier. The encapsulant is disposed on the carrier and covers the light emitter, the light receiver and the block structure. The encapsulant has a recess over the block structure.

Abstract: A type of combined electrical connector is at least made by combining an outer shell component and a tongue component. The tongue component at least consists of a tongue major conductive terminal assembly and a tongue minor conductive terminal assembly. Therefore, after the electrical connector design is completed, customization of the quantity, structure, and electrical connection relationships of the conductive terminals can still be achieved by adjusting the outer shell component and the tongue component to meet the specific requirements and advancements in electronic devices.

Abstract: A battery device comprises a case, a core pack, a signal unit and a non-volatile memory, wherein the core pack, the signal unit and the non-volatile memory are disposed in the case. The case has a first transmission terminal and a second transmission terminal. The signal unit is electrically connected to the core pack and the first transmission terminal, and is configured to output a voltage signal associated with the state of the core pack through the first transmission terminal. The non-volatile memory is electrically connected to the second transmission terminal, and is configured to receive and store information associate with the core pack through the second transmission terminal.

Abstract: A type of combined electrical connector is at least made by combining an outer shell component and a joining component. The joining component at least consists of a joining major conductive terminal assembly and a joining minor conductive terminal assembly. Therefore, after the electrical connector design is completed, customization of the quantity, structure, and electrical connection relationships of the conductive terminals can still be achieved by adjusting the outer shell component and the joining component to meet the specific requirements and advancements in electronic devices.

Abstract: A combined electrical connector at least composed of an outer shell component and a tongue component. The tongue component is at least composed of a tongue major conductive terminal assembly and a tongue minor conductive terminal assembly. Therefore, after the electrical connector design is completed, customization and adjustment of the quantity, structure, and electrical connection relationship of the conductive terminals of the electrical connector can still be achieved by adjusting the outer shell component and the tongue component. This allows meeting the specific requirements and developments of electronic devices.

Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.

Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Abstract: A wearable device includes a ground element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, and a fifth radiation element. The first radiation element has a feeding point, and is coupled to a first grounding point on the ground element. A slot region is surrounded by the first radiation element and the ground element. The second radiation element is coupled to a second grounding point on the ground element. The third radiation element is coupled to the second grounding point. The third radiation element and the second radiation element substantially extend in opposite directions. The fourth radiation element and the fifth radiation element are disposed inside the slot region. An antenna structure is formed by the first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Abstract: A keyswitch structure includes a base, a keycap, a first support, a second support, and a connection structure. The keycap moves up and down relative to the base through the first support and the second support. The connection structure is disposed on the base and includes a vertical-motion limiting part and a horizontal-motion limiting part. The first support includes a rod-shaped connection portion and is connected to the connection structure through the rod-shaped connection portion. The vertical-motion limiting part prevents the rod-shaped connection portion from vertically moving. The horizontal-motion limiting part limits the horizontal movement of the rod-shaped connection portion. The vertical-motion limiting part and the horizontal-motion limiting part are separated in the rotation axis of the rod-shaped connection portion.