Abstract: A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.

Abstract: A remote control system for gas detection and purification is disclosed and includes a remote control device, a gas detection module and a gas purification device. The remote control device includes a gas inlet and a gas outlet. The gas detection module is disposed in the remote control device and in communication with the gas outlet to detect the gas located in an indoor space. The gas detection module provides and outputs a gas detection datum, and the remote control device transmits an operation command via wireless transmission. The gas purification device is disposed in the indoor space and receives the operating instruction transmitted from the remote control device to be operated. When the gas purification device is under the activated state, the gas in the indoor space is purified, and the purification operation mode of the gas purification device is adjusted according to the first gas detection datum.

Abstract: A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.

Abstract: A vehicle electronic device is provided, including a vehicle window assembly, a first signal element, and a first protective element. The vehicle window assembly comprises a first protective substrate, a second protective substrate, and a display panel. The display panel is disposed between the first protective substrate and the second protective substrate. The first signal element is electrically connected to the display panel. The first protective element covers at least one portion of the first signal element.

Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: Disclosed herein is an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM having a first port and a second port, and a set of pass transistors coupled to the first port of the SRAM. In one aspect, the integrated circuit includes a set of MTJ cells, where each of the set of MTJ cells is coupled between a select line and a corresponding one of the set of pass transistors.

Abstract: Embodiments of the present invention provide methods and devices for performing wireless sensing operations that can accommodate different Rx frequency responses with minimum PHY changes to increase the performance and reliability of wireless sensing in wireless local area network (WLAN) networks. Rx frequency response information can be obtained as channel state information (CSI) in a loopback test and can further be normalized with the total gain in the receiver chain leading to CSI estimation. Moreover, different Rx frequency responses can be categorized into limited groups with underlying circuit conditions based on their frequency response variations. The different Rx frequency responses can be indicated in subfields of a CSI report transmitted to the sensing initiator for performing sensing operations with the sensing responder.

Abstract: A method for performing light shaping with aid of an adaptive projector and associated apparatus are provided.

Abstract: One wireless sensing method includes: generating a measurement request frame, wherein the measurement request frame is configured to carry indication information for phase report from a sensing responder, and sending the measurement request frame to the sensing responder. Another wireless sensing method includes: generating a measurement report frame, wherein the measurement report frame is configured to carry phase information, and sending the measurement report frame to a sensing initiator.

Abstract: An electronic modulating device is provided. The electronic modulating device includes a substrate, a plurality of first electrodes, a plurality of second electrodes and a third electrode. The plurality of first electrodes are disposed on the substrate. The plurality of second electrodes are disposed on the substrate. The third electrode is disposed on the plurality of first electrodes and the plurality of second electrodes, and includes a plurality of openings. The electronic modulating device is an antenna device. One of the plurality of openings is disposed corresponding to one of the plurality of first electrodes, and an area of the one of the plurality of openings is different from an area of another one of the plurality of openings.

Abstract: A method for performing light shaping with aid of an adaptive projector and associated apparatus are provided.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A display device includes a substrate, an electroluminescence element, a partition structure, a light conversion element and an intermediate layer. The electroluminescence element is disposed above the substrate. The partition structure is disposed above the electroluminescence element and includes a first opening. The light conversion element is disposed in the first opening. The intermediate layer is disposed above the light conversion element and the partition structure. The intermediate layer has a first part and a second part. In a top-view direction, the first part overlaps the light conversion element, the second part overlaps the partition structure, and a thickness of the first part is greater than a thickness of the second part.

Abstract: A method for manufacturing an electronic device includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, and enhancing a transmittance of the flexible substrate after forming the electric circuit layer.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: An operating method of an optical system in a vehicle is provided. The optical system includes a display device. The display device includes a display panel and a plurality of light emitting units. The light emitting units are configured to emit a light to the display panel. The operating method includes the following steps. An emphasized portion of an object is determined. An image corresponding to the emphasized portion is displayed by the display device by adjusting a light intensity of at least a portion of the light emitted from the light emitting units.

Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.

Abstract: An electronic device includes a substrate, a semiconductor unit and an insulating layer. The semiconductor unit is disposed on the substrate. The insulating layer is disposed on the semiconductor unit, and the insulating layer includes a first portion and a second portion connected to the first portion. In a top view, the first portion partially overlaps the semiconductor unit, the second portion does not overlap the semiconductor unit, and a part of an edge of the insulating layer is irregular.

Abstract: A processing apparatus for overlay shift includes a storage unit and a control unit, and is applicable to a semiconductor wafer with several inspection regions. Each of the inspection regions has several sets of overlay marks for inspection. One set of overlay marks includes an original alignment mark without any overlay shift, and several split alignment marks with predetermined overlay shifts arranged near the original alignment mark. The original after-etch inspection (AEI) overlay data of the inspection regions is stored in the storage unit. The after-develop inspection (ADI) overlay data of the original alignment mark and the split alignment marks are compared with the original AEI overlay data by the control unit, thereby acquiring ADI pre-bias data of the original alignment mark and the split alignment marks. The control unit determines whether an overlay shift compensation is performed according to the acquired ADI pre-bias data.