Abstract: Systems, computer program products, and methods are described herein for tracking resources using non-fungible tokens. The present invention is configured to receive a request for a non-fungible token (NFT) for a resource, wherein the resource is a physical object; initiate a non-fungible token (NFT) generator on the resource; generate a unique digital signature for the resource by generating a scanned image of the resource and identifying one or more features of the resource from the image; generate an NFT comprising a unique digital signature for the resource; determine a physical condition of the resource; store the physical condition of the resource in a first metadata layer associated with the NFT; and record the NFT for the resource on a distributed ledger.

Abstract: A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.

Abstract: Psilocin formulations of psilocin mucate with improved stability, physical properties and/or handling characteristics, as well as enhanced pharmacologic activity, pharmacokinetic parameters and safety characteristics as compared to psilocin or psilocybin and methods for their use are provided.

Abstract: The present disclosure provides a method of modifying a mutant dystrophin gene in the genome of a cell. The present disclosure further provides compositions and kits for modifying a mutant dystrophin gene in the genome of a cell.

Abstract: Composite airfoils of the present disclosure comprise a root section including a first surface. The airfoils comprise an intermediate section having a first surface and coupled with the root section at a first end. The airfoils comprise a tip section having a first surface and coupled at a first end with a second end of the intermediate section. The airfoils comprise a conductive material layer adjacent at least one of the first surface of the root section, the first surface of the intermediate section, and the first surface of the tip section. The conductive material comprises a first polymer, a second polymer, and a sulfonic acid.

Abstract: Discussed herein are devices, systems, and methods for decentralized device management. A method can include receiving a first message from a second device, implementing a first machine learning (ML) model that operates on the received first message and an observation to determine a next objective to be completed by the first device, and training a simulator to produce the first message based on the observation.

Abstract: Embodiments are directed towards a use of a supported biphenylphenol polymerization catalyst to make a polymer via a slurry-phase polymerization process, where the supported biphenylphenol polymerization catalyst is made from a biphenylphenol polymerization precatalyst of Formula I.

Abstract: Methods and compositions are provided for preventing or reducing symptoms or disease associated with Xylella fastidiosa or Xanthomonas axonopodis in a plant. The invention provides novel bacteriophages virulent to Xylella fastidiosa or Xanthomonas axonopodis, including XfaMija and XfaMijo, and further provides methods for treating or preventing Pierce's Disease or Citrus Canker in plants.

Abstract: An ultrasonic coupling device. The ultrasonic coupling device includes a hydrogel wherein the hydrogel has a water content of at least 10 wt %; and a near field communication device.

Abstract: Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.

Abstract: System and method are provided where parcels or packages are associated or grouped, into logical group or logical containerization of parcels or packages, without need for physical container, such that parcels or packages can be tracked as a group, for example with a unique group ID. Logical group may be tracked within specified logical zone on conveyor, transported, sorted and/or otherwise processed as unique logical group without need to be contained in physical container. System and method for automated sortation can accumulate set number or set volume of packages, and then process the accumulated set number or volume of packages.

Abstract: A method of deploying a multibranch stent graft at a target site having a main lumen and a first branch lumen is provided. The method includes advancing a catheter including a main body having a first portion and a second portion, the main body defining a first portal being pre-cannulated with a first guide member, partially deploying the first portion of the main body, advancing a first sheath along the first guide member through the first portal, advancing a first articulatable wire through the first sheath, positioning the first articulatable wire into a first branch lumen of the target site, partially deploying the second portion of the main body, fully deploying the first portion and the second portion of the main body, advancing a first side branch body along the first articulatable wire into the first branch lumen, and deploying the first side branch body in the first branch lumen.

Abstract: Methods, systems, and apparatuses for remote well operation control. Methods include conducting, with a plurality of remote well operation control hosts operating on corresponding remote well logging data acquisition management systems, a well operation using a well operation system at a well, wherein the well operation system includes a carrier having disposed thereon at least one logging instrument. Methods may include establishing a first operational control relationship between the carrier and a first of the plurality of remote well operation control hosts sufficient for the first remote well operation control host to control the carrier; and establishing a second operational control relationship between a selected one of the at least one logging instrument and a second remote well operation control host different than the first, the operational control relationship sufficient for the second remote well operation control host to control the at least one logging instrument and receive logging data.

Abstract: A multibranch implantable device including a main body including a tubular element having wall defining a main lumen, the tubular element having a first end defining a first opening into the main lumen and a second end defining a second opening in the main lumen, the tubular element including at least one side branch portal defining an aperture through the wall between the first longitudinal end and the second longitudinal end of the tubular element and at least one secondary body defining a secondary lumen, the at least one secondary body operable to be deployed with a portion of the secondary body positioned in the at least one side branch portal of the main body.

Abstract: An example medical device includes a device housing configured to be implantable within a patient, the device housing including an internal surface in contact with a voltaic cell of the battery, and a battery external to the device housing and comprising a battery housing configured to be hermetically sealed. The battery is configured to provide electrical power to an electrical component housed within the device housing, and the battery housing is configured to be attached to the device housing. The battery housing includes an internal surface in contact with a voltaic cell of the battery, and an external surface in contact with the biocompatible electrical insulator. an external surface in contact with the biocompatible electrical insulator.

Abstract: The present invention relates to substantially homogenous populations of human retinal progenitor cells having the following positive surface markers: SSEA4, CD73, PTK7 and PSA-NCAM. The invention also relates to method for preparing such substantially homogeneous cell populations from human tissue using cell sorting techniques.

Abstract: A separator for a crop harvester configured to harvest sugarcane. The separator includes an extractor body that defines a chamber, the chamber extending through the extractor body and is in fluid communication with a cavity of a fan housing. The extractor body can generally define an inlet opening of the chamber, the inlet opening positioned to allow chopped billets and crop residue that are outputted from a chopper assembly to enter into the chamber. The inlet opening has a non-round, or non-circular configuration and/or cross sectional shape. Further, the inlet opening can have a width similar to a material flow width of the chopped billets and crop residue being outputted from the chopper assembly. Such a configuration can eliminate dead zones with respect to air flow that is to pull the chopped crop materials into the chamber and/or to separate crop residue from the chopped billets.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be etched away, leaving the doped semiconductor layers as fins for a ribbon FET. A ferroelectric layer can be conformally grown on the fins, creating a high-quality ferroelectric layer above and below the fins. A gate can then be grown on the ferroelectric layer.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon FET. In another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. The interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.

Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.