Patents by Inventor A Ram RIM

A Ram RIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9324408
    Abstract: A semiconductor memory device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal, the first power control signal having an enablement period that may be controlled in response to a temperature signal having a cycle time. The cycle time may be controlled according to a mode signal and an internal temperature. The sense amplifier circuit may generate a first power signal driven to have a first drive voltage in response to the first power control signal. In addition, the sense amplifier circuit may sense and amplify a level of a bit line using the first power signal as a power supply voltage.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: April 26, 2016
    Assignee: SK hynix Inc.
    Inventors: A Ram Rim, Ho Uk Song
  • Publication number: 20160056716
    Abstract: An apparatus for adjusting an internal voltage includes a device characteristic detection circuit which detects a device characteristic, compares the device characteristic with an external clock, and generates a comparison signal, and an internal voltage adjustment circuit which receives an adjustment code generated based on the comparison signal, adjusts a level of an internal voltage, and generates a level-adjusted internal voltage.
    Type: Application
    Filed: January 9, 2015
    Publication date: February 25, 2016
    Inventors: Ho Uk SONG, A Ram RIM
  • Publication number: 20150348611
    Abstract: A semiconductor memory device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal, the first power control signal having an enablement period that may be controlled in response to a temperature signal having a cycle time. The cycle time may be controlled according to a mode signal and an internal temperature. The sense amplifier circuit may generate a first power signal driven to have a first drive voltage in response to the first power control signal. In addition, the sense amplifier circuit may sense and amplify a level of a bit line using the first power signal as a power supply voltage.
    Type: Application
    Filed: September 30, 2014
    Publication date: December 3, 2015
    Inventors: A Ram RIM, Ho Uk SONG
  • Publication number: 20150187434
    Abstract: A test circuit of a semiconductor apparatus includes a plurality of memory blocks, and a comparison block configured to compare data of two memory blocks, wherein the two of the plurality of memory blocks do not share word lines.
    Type: Application
    Filed: April 9, 2014
    Publication date: July 2, 2015
    Applicant: SK hynix Inc.
    Inventor: A Ram RIM