Abstract: A method and apparatus for thermally attaching web-based polishing pads in a chemical-mechanical planarization (CMP) system. Specifically, one end of a first web-based polishing pad and an end of a second web-based polishing pad are inserted in a thermal sealing unit. The ends of the polishing pads are brought into contact with each other and secured in place within the thermal sealing unit. A heating element within thermal sealing unit is activated, thereby fusing the polishing pads.

Abstract: A system for performing chemical mechanical polishing wherein a dopant is added to the slurry during a chemical mechanical planarization so as to enhance end point determination. In one embodiment, the CMP system includes a laser end point detection system that provides a signal indicative of the intensity of light being reflected off of the surface that is being removed by CMP. The slurry that is used in the CMP process is doped with a surfactant such that false peaks in intensity of the reflected signal is reduced so that the end point intensity peak resulting from the laser reflecting off of an underlying surface is more definite.

Abstract: A method and apparatus for thermally attaching web-based polishing pads in a chemical-mechanical planarization (CMP) system. Specifically, one end of a first web-based polishing pad and an end of a second web-based polishing pad are inserted in a thermal sealing unit. The ends of the polishing pads are brought into contact with each other and secured in place within the thermal sealing unit. A heating element within thermal sealing unit is activated, thereby fusing the polishing pads.

Abstract: A system for performing chemical mechanical polishing wherein a dopant is added to the slurry during a chemical mechanical planarization so as to enhance end point determination. In one embodiment, the CMP system includes a laser end point detection system that provides a signal indicative of the intensity of light being reflected off of the surface that is being removed by CMP. The slurry that is used in the CMP process is doped with a surfactant such that false peaks in intensity of the reflected signal is reduced so that the end point intensity peak resulting from the laser reflecting off of an underlying surface is more definite.

Abstract: A method and apparatus for thermally attaching web-based polishing pads in a chemical-mechanical planarization (CMP) system. Specifically, one end of a first web-based polishing pad and an end of a second web-based polishing pad are inserted in a thermal sealing unit. The ends of the polishing pads are brought into contact with each other and secured in place within the thermal sealing unit. A heating element within thermal sealing unit is activated, thereby fusing the polishing pads.

Abstract: A planarizing pad having a leak resistant optical system to provide an optical path through the pad and to inhibit or prevent planarizing solution from leaking through the pad. In one embodiment of a planarizing machine, the machine includes a table having a support surface and an optical monitoring system coupled to the table. The optical monitoring system can have a light source and an optical sensor aligned with an opening in the table to direct and detect a light beam through the opening. The planarizing machine can further include a planarizing pad coupled to the support surface of the table. The planarizing pad comprises a planarizing medium, an optically transmissive window in the planarizing medium, and a backing member attached to the planarizing medium. The planarizing medium can have a planarizing surface, a backside opposite the planarizing surface, and at least one hole extending from the planarizing surface to the backside.

Abstract: A system for performing chemical mechanical polishing wherein a dopant is added to the slurry during a chemical mechanical planarization so as to enhance end point determination. In one embodiment, the CMP system includes a laser end point detection system that provides a signal indicative of the intensity of light being reflected off of the surface that is being removed by CMP. The slurry that is used in the CMP process is doped with a surfactant such that false peaks in intensity of the reflected signal is reduced so that the end point intensity peak resulting from the laser reflecting off of an underlying surface is more definite.

Abstract: A system for performing chemical mechanical polishing wherein a dopant is added to the slurry during a chemical mechanical planarization so as to enhance end point determination. In one embodiment the CMP system includes a laser end point detection system that provides a signal indicative of the intensity of light being reflected off of the surface that is being removed by CMP. The slurry that is used in the CMP process is doped with a surfactant such that false peaks in intensity of the reflected signal is reduced so that the end point intensity peak resulting from the laser reflecting off of an underlying surface is more definite.