Abstract: Maghnia or Mostaganem bentonites, are activated by contacting the Maghnia or Mostaganem bentonite with an acid solution of selected concentration and then drying the Maghnia or Mostaganem bentonite to form an activated bentonite catalyst. This activated bentonite catalyst may be used to polymerize a vinyl, acrylic, cyclic ether, aldehyde, lactone or olefin monomer. In a further embodiment, a perflourinated amine or diamine is synthesized by contacting a Maghnia or Mostaganem bentonite with an acid solution of selected concentration, drying the Maghnia or Mostaganem bentonite, and absorbing a secondary amine with the Maghnia or Mostaganem bentonite to form a perflouroamide iodide salt. The perflouramide idodide salt can then be extracted with a polar solvent and neutralized by the use of a basic solution.

Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied by means of the first and second conductors.

Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied by means of the first and second conductors.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied be means of the first and second conductors.

Abstract: Maghnia or Mostaganem bentonites, are activated by contacting the Maghnia or Mostaganem bentonite with an acid solution of selected concentration and then drying the Maghnia or Mostaganem bentonite to form an activated bentonite catalyst. This activated bentonite catalyst may be used to polymerize a vinyl, acrylic, cyclic ether, aldehyde, lactone or olefin monomer. In a further embodiment, a perflourinated amine or diamine is synthesized by contacting a Maghnia or Mostaganem bentonite with an acid solution of selected concentration, drying the Maghnia or Mostaganem bentonite, and absorbing a secondary amine with the Maghnia or Mostaganem bentonite to form a perflouroamide iodide salt. The perflouramide idodide salt can then be extracted with a polar solvent and neutralized by the use of a basic solution.

Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied be means of the first and second conductors.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: Maghnia or Mostaganem bentonites, are activated by contacting the Maghnia or Mostaganem bentonite with an acid solution of selected concentration and then drying the Maghnia or Mostaganem bentonite to form an activated bentonite catalyst. This activated bentonite catalyst may be used to polymerize a vinyl, acrylic, cyclic ether, aldehyde, lactone or olefin monomer. In a further embodiment, a perflourinated amine or diamine is synthesized by contacting a Maghnia or Mostaganem bentonite with an acid solution of selected concentration, drying the Maghnia or Mostaganem bentonite, and absorbing a secondary amine with the Maghnia or Mostaganem bentonite to form a perflouroamide iodide salt. The perflouramide idodide salt can then be extracted with a polar solvent and neutralized by the use of a basic solution.

Abstract: Maghnia or Mostaganem bentonites, are activated by contacting the Maghnia or Mostaganem bentonite with an acid solution of selected concentration and then drying the Maghnia or Mostaganem bentonite to form an activated bentonite catalyst. This activated bentonite catalyst may be used to polymerize a vinyl, acrylic, cyclic ether, aldehyde, lactone or olefin monomer. In a further embodiment, a perflourinated amine or diamine is synthesized by contacting a Maghnia or Mostaganem bentonite with an acid solution of selected concentration, drying the Maghnia or Mostaganem bentonite, and absorbing a secondary amine with the Maghnia or Mostaganem bentonite to form a perflouroamide iodide salt. The perflouramide idodide salt can then be extracted with a polar solvent and neutralized by the use of a basic solution.

Abstract: Field emitter as a source of electrons and method for making are provided. The emitter is formed by growth of a nitride compound of a group III element or alloys of group III elements on a substrate having a lattice mismatch with the thin film. The lattice mismatch causes columnar growth in the film. The micro columns have tips, thus forming an array of crystalline microtips of the low work function nitride material. The nitride compound is doped during growth. Gallium nitride grown on (111) silicon and doped with silicon produces a surface having low threshold electric field for emission and high current per unit area.

Abstract: A method is provided for determining etching characteristics during gas phase etching of thin film materials such as semiconductors during manufacture of devices. Etch end point, rate of etching, uniformity of etching and uniformity of growth of thin films can be determined. Isotopically enriched materials are deposited in layers which may be only a few nanometers thick at selected locations during growth of the thin films. The isotopes are removed during gas phase etching, carried by gas into an analysis chamber, condensed on a surface, and analyzed for isotopical composition. Mass spectroscopy of recoiled ions is a preferred detection technique.

Abstract: A valve to allow digitally addressable flow controllers is provided. An array of micromachined valves having a range of flow capacities and individually addressable while functioning in an On/Off mode allows flow controllers and similar devices high resolution, linearity and reproducibility. The incorporation of diamond or diamond-like materials in all flow paths extends the application of the valves to corrosive materials and permits higher process temperatures and lower particulate generation.

Abstract: An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output.A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Abstract: A monolithic, tandem photovoltaic device is provided having an indium phosphide tunnel junction lattice-matched to adjoining subcells and having high peak current densities and low electrical resistance. A method is provided for relatively low-temperature epitaxial growth of a tunnel junction and a subcell over the tunnel junction at temperatures which leave intact the desirable characteristics of the tunnel junction.

Abstract: A monolithic, tandem photovoltaic device is provided having an indium gallium arsenide tunnel junction lattice-matched to adjoining subcells and having high peak current densities and low electrical resistance. A method is provided for relatively low-temperature epitaxial growth of a subcell over the tunnel junction at temperatures which leave intact the desirable characteristics of the tunnel junction.