Abstract: A method for the measurement of temperature in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 1700° C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the temperature.

Abstract: A transition metal catalyst free polycrystalline diamond compact having enhanced thermal stability is disclosed herein. The diamond compact may be attached to a hard metal substrate. The polycrystalline diamond body includes a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds. Sintering of the PCD and the formation of diamond-to-diamond bonding is achieved by transforming graphene treated diamond crystals that are blended with non-metal additives at high pressure and high temperature into a diamond compact that is free of transition metal catalysts. Non-metal additives include vitreous and other non-equilibrium forms of carbon as well as Sr-, K- and Ca-containing carbon sources.

Abstract: Diamond particles with enhanced reactivity are used to sinter polycrystalline diamond (PCD), under high pressure and high temperature conditions. Copper and tin form a solution with transition metal catalyst (cobalt) used to sinter diamond particles. Copper and tin enhance the reactivity of the diamond particles, reduce the coefficient of thermal expansion (CTE) mismatch between cobalt and polycrystalline diamond, and lead to a more homogeneous distribution of catalyst metal in PCD. A cutting element may comprise a substrate and a polycrystalline diamond table bonded to the substrate produced by sintering diamond particles with enhanced reactivity mixed with standard diamond particles and chemical additives. These combined effects (more reactive diamond particles, reduced CTE mismatch, and homogeneous distribution of catalyst metal) lead to better performing tools.

Abstract: A method for the measurement of temperature in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 1700° C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the temperature.

Abstract: A tool and a method of making the tool are disclosed. The tool includes a superabrasive compact, for example, a volume of silicon carbide diamond bonded composite, directly bonded to a tungsten carbide body during sintering. The green body may have a recess with a complementary shape to the superabrasive compact, whereby after inserting at least a part of the superabrasive compact within the recess and sintering, the tungsten carbide body and the recess shrink to form an interference fit therebetween.

Abstract: A tool and a method of making the tool are disclosed. The tool includes a superabrasive compact, for example, a volume of silicon carbide diamond bonded composite, directly bonded to a tungsten carbide body during sintering. The green body may have a recess with a complementary shape to the superabrasive compact, whereby after inserting at least a part of the superabrasive compact within the recess and sintering, the tungsten carbide body and the recess shrink to form an interference fit therebetween.

Abstract: A cutting tool having a sintered compact including 30 to 80 vol. % cubic boron nitride and a binder phase, wherein the binder phase includes about 2 to about 6 vol. % ZrN, is disclosed. In more specific examples, the cutting tool has a sintered compact including 30 to 80 vol. % cubic boron nitride, between about 4 vol. % and about 15 vol. % aluminum and/or aluminum compound and/or aluminum alloy and/or combinations thereof, and a binder phase, wherein the binder phase includes TiN and about 3 to about 5 vol. % ZrN, and wherein the cubic boron nitride has a grain size of less than 20 microns. Cutting tools of the disclosed composition display improved performance, particularly at higher operating speeds, e.g., about 200 m/min or greater.

Abstract: A method for the measurement of pressure in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 2000° C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the pressure ex situ.

Abstract: A method of making diamond including mixing graphene with diamond seed to form a powder mixture, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature; and a method of making a polycrystalline diamond compact including mixing graphene in diamond powder to form a powder mixture with less than about 50% graphene by weight, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature.

Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

Abstract: A composite compact formed by sintering, at high temperature/high pressure, a composition including cBN in a range of about 5 to about 60 vol. %, zirconia (or in the range about 5 to about 20 vol. %), and other ceramic material. Subsequent to sintering, the zirconia exists in the cubic phase and/or tetragonal phase. The zirconia may be either stabilized or unstabilized prior to sintering. The other ceramic material may include one or more of nitrides, borides, and carbides of Ti, Zr, Hf, Al, Si, or Al2O3. Some of the ceramic material is formed during the sintering process. The compact can be bonded to a tungsten carbide substrate during the sintering process.

Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.

Abstract: A method of making a polycrystalline diamond compact including providing a layer of graphene on top of a sintered PCD and transforming the graphene at high pressure and temperature into diamond that is free of metal catalyst. A method of making PCD by providing a layer of graphene powder on top of a layer of diamond powder and sintering at high pressure and temperature to transform the graphene into diamond that is free of metal catalyst at the surface.

Abstract: A method of making diamond including mixing graphene with diamond seed to form a powder mixture, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature; and a method of making a polycrystalline diamond compact including mixing graphene in diamond powder to form a powder mixture with less than about 50% graphene by weight, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature.

Abstract: A sintered compact for use in making a cutting tool, the sintered compact including about 10 vol. % to about 90 vol. % cubic boron nitride, and a binder phase including about 0.1 vol. % to about 10 vol. % graphene. A method for a sintered compact including mixing a powder blend having about 10 vol. % to about 90 vol. % cubic boron nitride and about 0.1 vol. % to about 10 vol. % graphene, pressing the powder blend into a pill, and sintering the pill at high pressure and high temperature. A sintered cutting tool including about 10 vol. % to about 90 vol. % cubic boron nitride, and a binder phase including about 0.1 vol. % to about 10 vol. % graphene, wherein the sintering is performed at a pressure of about 45 kBar and a temperature of about 1500° C. for about 30 minutes.

Abstract: A method for increasing the Seebeck coefficient of a semiconductor involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the Seebeck coefficient of the semiconductor, and recovering the semiconductor with an increased Seebeck coefficient.

Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.

Abstract: A composite compact formed by sintering, at high temperature/high pressure, a composition including cBN in a range of about 5 to about 60 vol. %, zirconia (or in the range about 5 to about 20 vol. %), and other ceramic material. Subsequent to sintering, the zirconia exists in the cubic phase and/or tetragonal phase. The zirconia may be either stabilized or unstabilized prior to sintering. The other ceramic material may include one or more of nitrides, borides, and carbides of Ti, Zr, Hf, Al, Si, or Al2O3. Some of the ceramic material is formed during the sintering process. The compact can be bonded to a tungsten carbide substrate during the sintering process.

Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

Abstract: A cutting tool having a sintered compact including 30 to 80 vol. % cubic boron nitride and a binder phase, wherein the binder phase includes about 2 to about 6 vol. % ZrN, is disclosed. In more specific examples, the cutting tool has a sintered compact including 30 to 80 vol. % cubic boron nitride, between about 4 vol. % and about 15 vol. % aluminum and/or aluminum compound and/or aluminum alloy and/or combinations thereof, and a binder phase, wherein the binder phase includes TiN and about 3 to about 5 vol. % ZrN, and wherein the cubic boron nitride has a grain size of less than 20 microns. Cutting tools of the disclosed composition display improved performance, particularly at higher operating speeds, e.g., about 200 m/min or greater.