Abstract: A gas purged counter-electrode prevents the counter-electrode from being covered with dielectric material by flowing gas past a surface of a metal element. The gas purged counter-electrode produces a relatively high-density plasma which effectively acts as the counter-electrode for a coating system. The gas purged counter-electrodes can be used with PECVD or sputtering systems.

Abstract: An array of hollow cathodes can be made by mounting a housing connected to a source of plasma precursor gas and to a source of power in a vacuum chamber, said housing having a plurality of uniformly spaced openings in a wall thereof into which a plasma can be generated. A substrate to be treated is mounted parallel to and spaced a preselected distance from said openings. In operation, a plurality of plasma torches is created extending from the openings which can plasma etch and remove coatings on said substrate.

Abstract: An infrared reflecting interference filter capable of transmitting a desired proportion of visible radiation while reflecting a large portion of incident solar radiation is provided. The filter comprises a transparent substrate onto which is deposited a dielectric layer, followed by metal and dielectric layers. In between each of the dielectric and metal layers is deposited a precoat layer that promotes adhesion between the dielectric and the metal. One aspect of the invention is the use of a film comprising nickel and chromium nitride for each of the metal precoat layers. These precoat layers are thin so that there is less absorption of visible light but yet maintains good adhesive properties. Another aspect of the invention is the use of silver as the metal layer. Specifically, silver is sputtered in an atmosphere containing a mixture of nitrogen and argon or other inert gas.

Abstract: An infrared reflecting interference filter capable of transmitting a desired proportion of visible radiation while reflecting a large portion of incident solar radiation is provided. The filter consists of a transparent substrate coated first with a dielectric layer, next a partially metal reflectance layer, and finally an outer protective dielectric layer. In addition, between each metal-dielectric interface is deposited a nucleation or glue layer that facilitates adhesions and improves chemical and mechanical resistance. The interference filters are durable and can be modified to provide a full range of optical and electrical characteristics. The dielectric layer can comprise of composite films consisting of silicon nitride in combination with zirconium nitride, titanium nitride, and/or hafnium nitride.

Abstract: A triple magnetron array positioned inside a vacuum chamber is provided. The array includes a planar magnetron situated above dual rotatable unbalanced cylindrical magnetrons. The planar magnetron is partially shielded from the dual magnetrons by a baffle. An inert gas outlet is positioned near the planar magnetron target whereas oxygen gas outlets are positioned near the cylindrical magnetrons. In this fashion, the reactive gas flow to the planar magnetron is restricted. The system is particularly well suited for forming metal oxide films, such as titanium oxide, that are difficult to deposit by conventional means. The oxygen flow rate is controlled so that the planar magnetron operates in the metallic mode.

Abstract: A rotating cylindrical sputtering target surface as part of a magnetron has cylindrical shields adjacent each end of the target to prevent arcing that undesirably occurs when certain materials are being sputtered, particularly dielectrics. If two or more rotating targets are employed in a single magnetron system, each is similarly shielded. In a preferred form, the target is provided with a single cylindrical shield that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This preferred shield is rotatable in order to allow the position of the sputtering activity to be selected.

Abstract: A method for depositing a protective coating by cathode sputtering of an alloy of aluminum and silicon in a reactive gas is disclosed. The sputtering target contains sufficient silicon to produce an amorphous coating; 6 to 18 percent silicon is preferred. Targets of approximately 88% aluminum and 12% silicon are especially preferred. Oxygen, nitrogen, compounds of oxygen and compounds of nitrogen are preferred reactive gases. A range of combinations of oxygen and nitrogen are particularly preferred. The method provides durable transparent coatings which may be used as an overcoating for a metal or dielectric coating to provide increased resistance to abrasion and corrosion. In particular, the protected coating may be a metal, dielectric or dielectric-metal-dielectric coating as used in double-glazed window units for buildings or vehicles.