Abstract: A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.

Abstract: A polishing system includes a polishing station including a platen to support a polishing pad, a support to hold a substrate, an in-line metrology station to measure the substrate before or after polishing of a surface of the substrate in the polishing station, and a controller. The in-line metrology station includes a color line-scan camera, a white light source, a frame supporting the light source and the camera, and a motor to cause relative motion between the camera and the support along a second axis perpendicular to the first axis to cause the light source and the camera to scan across the substrate. The controller is configured to receive a color data from the camera, to generate a 2-dimensional color image from the color data, and to control polishing at the polishing station based on the color image.

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Abstract: Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

Abstract: A method and apparatus to determine a parameter of a metal-containing film are provided herein. In some embodiments, a method of determining a parameter of a metal-containing film may include generating a first magnetic field by flowing an alternating current through a coil disposed adjacent to and spaced apart from the metal-containing film, wherein the first magnetic field induces a second magnetic field proximate the metal-containing film; heating the metal-containing film from a first temperature to a second temperature; measuring a response of the first magnetic field to the second magnetic field as the metal-containing film is heated from the first temperature to the second temperature; and correlating the response with a rate of temperature change of the metal-containing film as the metal-containing film is heated from the first temperature to the second temperature to determine a parameter of the metal-containing film.

Abstract: A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.

Abstract: A polishing system includes a polishing station including a platen to support a polishing pad, a support to hold a substrate, an in-line metrology station to measure the substrate before or after polishing of a surface of the substrate in the polishing station, and a controller. The in-line metrology station includes a color line-scan camera, a white light source, a frame supporting the light source and the camera, and a motor to cause relative motion between the camera and the support along a second axis perpendicular to the first axis to cause the light source and the camera to scan across the substrate. The controller is configured to receive a color data from the camera, to generate a 2-dimensional color image from the color data, and to control polishing at the polishing station based on the color image.

Abstract: A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.

Abstract: Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Abstract: An optical calibration method and apparatus for calibration of wafer positioning within a reactor chamber under process conditions employs an array of cameras in a lid of the chamber using images of the wafer edge to locate the wafer relative to the reference feature.

Abstract: Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.