Abstract: Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Abstract: Techniques are provided to allow full search for encrypted data within a database. In some embodiments, searchable data may be separated into different searchable tables in a database in such a way that encrypted data is stored as plaintext but has no usable link to other data within the source database. In some embodiments, performing a query on a particular user data may result in the retrieval of an encrypted identifier, which may then be decrypted via an encryption module. A second search based on the decrypted identifier may produce a set of relevant search results from a source table.

Abstract: A method of loading project data comprising identifying project files with a project ID. The method includes determining a secondary project file is referenced in a primary project file. The method includes loading the project ID of the secondary and primary project files into a reference table. The primary project file project ID and the secondary project file project ID referenced in the respective primary project file are associated with one another in the reference table. The method includes receiving a query for the primary project files referencing a queried secondary project file. The method includes determining the project IDs of the primary project files in the reference associated with the project ID of the queried secondary project file. The method includes providing a results table including the primary project file project IDs associated with the queried secondary project file project ID in the reference table.

Abstract: The solution herein describes a software module that works in combination with certain hardware (e.g., a particular chipset) to obtain the level of security provided by an HSM. The software module can be implemented on a commodity server. The software module can utilize an HSM or key custodian to obtain cryptographic keys. The cryptographic keys may be stored on the commodity server within a secure memory space managed by the commodity server's chip set. While stored, access to the cryptographic keys may be managed by the chip set. The chip set can ensure that only protected applications associated with the cryptographic keys may access said keys.

Abstract: A total internal reflection photoconductive switch and method of activating such a switch, where the switch includes a pair of electrodes on opposite sides of a photoconductive material having a substantially-rectangular prism geometry. The substantially-rectangular prism geometry includes four edge facets, two opposing electrode-connection facets separated by the edge facets, and at least one input facet located at a corner of the substantially-rectangular prism geometry that is positioned between two edge facets and the two electrode-connection facets, for receiving light therethrough into the photoconductive material at angles supporting total internal reflection.

Abstract: Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Abstract: Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Abstract: Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Abstract: The solution herein describes a software module that works in combination with certain hardware (e.g., a particular chipset) to obtain the level of security provided by an HSM. The software module can be implemented on a commodity server. The software module can utilize an HSM or key custodian to obtain cryptographic keys. The cryptographic keys may be stored on the commodity server within a secure memory space managed by the commodity server's chip set. While stored, access to the cryptographic keys may be managed by the chip set. The chip set can ensure that only protected applications associated with the cryptographic keys may access said keys.

Abstract: A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

Abstract: Techniques are provided to allow full search for encrypted data within a database. In some embodiments, searchable data may be separated into different searchable tables in a database in such a way that encrypted data is stored as plaintext but has no usable link to other data within the source database. In some embodiments, performing a query on a particular user data may result in the retrieval of an encrypted identifier, which may then be decrypted via an encryption module. A second search based on the decrypted identifier may produce a set of relevant search results from a source table.

Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.

Abstract: A total internal reflection photoconductive switch and method of activating such a switch, where the switch includes a pair of electrodes on opposite sides of a photoconductive material having a substantially-rectangular prism geometry. The substantially-rectangular prism geometry includes four edge facets, two opposing electrode-connection facets separated by the edge facets, and at least one input facet located at a corner of the substantially-rectangular prism geometry that is positioned between two edge facets and the two electrode-connection facets, for receiving light therethrough into the photoconductive material at angles supporting total internal reflection.

Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.

Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Abstract: A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

Abstract: In one embodiment, a method of forming a vertical transistor includes forming a layer comprising a semiconductor material above a substrate, defining three dimensional (3D) structures in the layer, forming a second region in at least one vertical sidewall of each 3D structure, and forming an isolation region between the 3D structures. In another embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of 3D structures above the substrate, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure.

Abstract: According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.

Abstract: According to one embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including a semiconductor material; an array of three dimensional (3D) structures above the substrate; and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, where the second region includes a portion of at least one vertical sidewall of the 3D structure.