Patents by Inventor Adam Fraser Halverson

Adam Fraser Halverson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic Devices and Method of Making
    Publication number: 20240055546
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 15, 2024
    Applicant: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic devices and method of making
    Patent number: 11784278
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: October 10, 2022
    Date of Patent: October 10, 2023
    Assignee: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic devices and method of making
    Patent number: 11588069
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: February 21, 2023
    Assignee: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic Devices and Method of Making
    Publication number: 20230045333
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: October 10, 2022
    Publication date: February 9, 2023
    Applicant: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic Devices and Method of Making
    Publication number: 20210399159
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: September 3, 2021
    Publication date: December 23, 2021
    Applicant: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic devices and method of making
    Patent number: 11164989
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: November 2, 2021
    Assignee: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic devices and method of making
    Patent number: 11114580
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: September 7, 2021
    Assignee: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic Devices and Method of Making
    Publication number: 20200350459
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Applicant: First Solar, Inc.
    Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
  • Photovoltaic devices and method of making
    Patent number: 10784397
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: September 22, 2020
    Assignee: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic devices and method of making
    Patent number: 10720546
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: July 21, 2020
    Assignee: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic Devices and Method of Making
    Publication number: 20190097079
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: November 26, 2018
    Publication date: March 28, 2019
    Applicant: First Solar Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic devices and method of making
    Patent number: 10141473
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: November 27, 2018
    Assignee: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic Devices and Method of Making
    Publication number: 20180323334
    Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
    Type: Application
    Filed: July 11, 2018
    Publication date: November 8, 2018
    Applicant: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic devices and method of making
    Patent number: 10062800
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: August 28, 2018
    Assignee: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
  • Photovoltaic devices
    Patent number: 9871154
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: January 16, 2018
    Assignee: First Solar, Inc.
    Inventors: Anil Raj Duggal, Joseph John Shiang, William Hullinger Huber, Adam Fraser Halverson
  • Methods of fabricating a photovoltaic module, and related system
    Patent number: 9490386
    Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: November 8, 2016
    Assignee: FIRST SOLAR, INC.
    Inventors: Bastiaan Arie Korevaar, Jinbo Cao, Adam Fraser Halverson, Scott Daniel Feldman-Peabody, Mark Jeffrey Pavol, Douglas Garth Jensen
  • METHODS OF FABRICATING A PHOTOVOLTAIC MODULE, AND RELATED SYSTEM
    Publication number: 20160163911
    Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.
    Type: Application
    Filed: February 11, 2016
    Publication date: June 9, 2016
    Applicant: First Solar Malaysia Sdn. Bhd.
    Inventors: Bastiaan Arie Korevaar, Jinbo Cao, Adam Fraser Halverson, Scott Daniel Feldman-Peabody, Mark Jeffrey Pavol, Douglas Garth Jensen
  • Methods of fabricating a photovoltaic module, and related system
    Patent number: 9276147
    Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: March 1, 2016
    Assignee: First Solar, Inc.
    Inventors: Bastiaan Arie Korevaar, Jinbo Cao, Adam Fraser Halverson, Scott Daniel Feldman-Peabody, Mark Jeffrey Pavol, Douglas Garth Jensen
  • PHOTOVOLTAIC DEVICES
    Publication number: 20140373908
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.
    Type: Application
    Filed: June 21, 2013
    Publication date: December 25, 2014
    Applicant: First Solar Inc.
    Inventors: Anil Raj Duggal, Joseph John Shiang, William Hullinger Huber, Adam Fraser Halverson
  • PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    Publication number: 20140360565
    Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
    Type: Application
    Filed: June 7, 2013
    Publication date: December 11, 2014
    Applicant: First Solar, Inc.
    Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson